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Long-wavelength quantum-dot lasers

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Abstract

Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use in surface-emitting laser diodes. QDs are obtained by employing two different approaches, seeding and overgrowth with a quantum well, yielding similar recombination spectra. Despite the shift to long wavelengths, a large separation (≥80 meV) between excited states is maintained. The introduction of such QDs into a vertical cavity leads to a strong narrowing of the emission spectrum. Lasing from 1300-nm QD VCSEL is reported.

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Authors and Affiliations

  1. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraae 36, D-10623, Berlin, Germany

    M. Grundmann, N. N. Ledentsov, F. Hopfer, F. Heinrichsdorff, F. Guffarth & D. Bimberg

  2. A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia

    V. M. Ustinov, A. E. Zhukov, A. R. Kovsh, M. V. Maximov, Yu. G. Musikhin & Zh. I. Alferov

  3. Air Force Institute of Technology, Wright-Patterson AFB, Ohio, USA

    J. A. Lott

  4. Max-Planck-Institut für Mikrostrukturphysik Weinberg 2, D-06120, Halle/S, Germany

    N. D. Zhakharov & P. Werner

Authors
  1. M. Grundmann
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  2. N. N. Ledentsov
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  3. F. Hopfer
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  4. F. Heinrichsdorff
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  5. F. Guffarth
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  6. D. Bimberg
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  7. V. M. Ustinov
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  8. A. E. Zhukov
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  9. A. R. Kovsh
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  10. M. V. Maximov
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  11. Yu. G. Musikhin
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  12. Zh. I. Alferov
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  13. J. A. Lott
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  14. N. D. Zhakharov
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  15. P. Werner
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Grundmann, M., Ledentsov, N.N., Hopfer, F. et al. Long-wavelength quantum-dot lasers. Journal of Materials Science: Materials in Electronics 13, 643–647 (2002). https://doi.org/10.1023/A:1020610109933

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  • DOI: https://doi.org/10.1023/A:1020610109933

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