Abstract
The influence of crystallographic orientation of the growth surface near (100) and (111)A GaAs singular faces on the silicon capture into A- and B-sublattices of gallium arsenide in molecular beam epitaxy is investigated by the electrophysical and photoluminescence methods. It is demonstrated that the silicon dopand is incorporated into GaAs layers not only as simple SiGa donors but also as elemental SiGa acceptors and more complex defects, namely, SiAs–VAs complexes. The concentration of defects of different types in layers depends on the orientation of the growth surface, and the amphoteric properties of silicon on the (111)A face are manifested stronger than those on the (100) face.
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Bobrovnikova, I.A., Vilisova, M.D., Ivonin, I.V. et al. Influence of the Substrate Orientation on the Silicon Capture into A- and B- Sublattices of Gallium Arsenide in Molecular Beam Epitaxy. Russian Physics Journal 45, 414–418 (2002). https://doi.org/10.1023/A:1020543427057
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DOI: https://doi.org/10.1023/A:1020543427057