Abstract
The effects of heat treatment and storage conditions on the luminescent properties of PbI2 crystals were studied. The crystals were grown by the Bridgman–Stockbarger method using a nutrient purified by directional solidification. The steady-state roentgeno- and photoluminescence spectra and thermoluminescence curves were measured in the range 85–295 K. The photoelectret properties of the crystals were studied at 85 K. The results suggest that the 595-nm luminescence of PbI2 , observed in the surface layer after heat treatment at 475–495 K, may be due to oxygen-containing centers. The 715-nm emission is assumed to be due to anion excitons and to result from radiative recombination near Pb+ ions complexed with iodine vacancies. The nature of the trapping centers and the mechanisms for the development of the electret state in PbI2 crystals are discussed.
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Novosad, S.S., Novosad, I.S. & Matviishin, I.M. Luminescence and Photosensitivity of PbI2 Crystals. Inorganic Materials 38, 1058–1062 (2002). https://doi.org/10.1023/A:1020541724679
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DOI: https://doi.org/10.1023/A:1020541724679