Abstract
Studies of the volume secondary radiation (photoluminescence and Raman scattering) in wide-gap semiconductors (GaP, ZnSe) and condensed dielectrics were carried out at various temperatures. The low-temperature variations of the dielectric constants were evaluated. The anti-Stokes photoluminescence from the sample bulk, resulting from interband and impurity recombination, was observed for the first time when exciting the spectra of secondary radiation by the continuous radiation of a low-power helium--neon laser with the lasing line in the transparency region of gallium phosphide. A similar effect was observed at low temperatures in zinc selenide excited by an argon laser. Photoluminescence from the sample bulk was also found for a number of condensed dielectrics (hydrocarbons and oil) at room temperature. The results obtained allow analysis of impurities in the bulk of semiconductors and dielectrics based on recording the volume photoluminescence spectra.
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Gorelik, V.S., Karuzskii, A.L., Sverbil', P.P. et al. Laser-Excited Volume Secondary Radiation in Wide-Gap Semiconductors and Dielectrics. Journal of Russian Laser Research 23, 459–483 (2002). https://doi.org/10.1023/A:1020402720735
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DOI: https://doi.org/10.1023/A:1020402720735