Abstract
Carbon nanotubes (CNTs) were vertically well-grown on Ni/Cr-deposited glass substrates at 580 °C by ICPCVD and bias-assisted ICPHFCVD techniques. The vertically well-aligned CNTs showed multi-walled type with hollow structure. The measured critical current density on CNTs grown by the ICPCVD technique was 1.0×10−6 A cm−2 at 5 V μm−1 of turn-on field and 7.7×10−5 A cm−2 at 7.8 V μm−1 of the critical field. On the other hand, the critical current density on CNTs grown by the bias-assisted ICPHFCVD technique was 3.7×10−7 A cm−2 at 3 V μm of turn-on field and 3.3×10−4 A cm−2 at 6.8 V μm−1 of the critical field, respectively. On comparing the two processes, it can be concluded that CNTs grown by bias-assisted ICPHFCVD are more suitable than those grown by ICPCVD for the possible application of field emission displays (FEDs).
Similar content being viewed by others
References
S. Uemura, T. Nagasako, J. Yotani, T. Shimojo and Y. Saito, SID' 98 Dig. (1998) 1052.
T. Ishihara, A. Kawahara, H. Nishiguchi, M. Yoshio and Y. Takita, J. Power Sources 97–98 (2001) 129.
E. Frackowiak and F. Beguin, Carbon 39 (2001) 937.
S. L. Huang, M. R. Koblischka, K. Fossheim, T. W. Ebbesen and T. H. Johansen, Physica 311 (1999) 172.
K. Tanaka, T. Yamabe and K. Fukui “The Science and Technology of Carbon Nanotubes” (Elsevier, Japan, 1999) p. 2.
R. Saito, G. Dresselhaus and M. S. Dresselhaus, “Physical Properties of Carbon Nanotubes” (Imperial College, London, 1998) p. 35.
Y. Ando, X. Zhao, H. Kataura, Y. Achiba, K. Kaneto, M. Tsuruta, S. Uemura and S. Iiijima, Diam. Relat. Mater. 9 (2000) 847.
L. P. Biro, G. I. Mark, J. Gyulai, K. Havancsak, S. Lipp, Ch. Lehrer, L. Frey and H. Ryssel, Nucl. Instrum. Methods in Phys. Res. B 147 (1999) 142.
M. Nath, B. C. Satishkumar, A. Govindaraj, C. P. Vinod and C. N. R. Rao, Chem. Phys. Lett. 322 (2000) 333.
S. J. Chung, S. H. Lim and J. Jang, Thin Solid Films. 383 (2001) 73.
L. C. Qin, D. Zhau, A. R. Krauss and D. M. Gruen, Appl. Phys. Lett. 72 (1998) 3437.
Z. F. Ren, Z. P. Huang, J. W. Xu, J. H. Wanh, P. Bush, M. P. Siegal and P. N. Provencio, Science. 282 (1998) 1105.
J. M. Bonard, H. Kind, T. StÖckli and L. O. Nilsson, Solid-State Electron. 45 (2001) 893.
W. Zhu, C. Bower, G. P. Kochansk and S. Jin, ibid. 45 (2001) 921.
C. J. Lee and J. H. Park, Carbon 39 (2001) 1891.
R. T. K. Baker, ibid. 27 (1989) 315.
T. W. Ebbesen “Carbon Nanotubes: Preparation and Properties” (CRC, United States of America, 1997) p. 73, 228.
W. Zau, C. Bower, O. Zhou, G. Kochanski and S. Jin, Appl. Phys. Lett. 75 (1999) 873.
Q. H. Wang, T. D. Corrigan, J. Y. Dai, R. P. H. Chang and A. R. Krauss, ibid. 70 (1997) 3308.
R. Schlesser, R. Collazo, C. Bower, O. Zhou and Z. Sitar, Diam. Relat. Mater. 9 (2000) 1201.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kim, K.S., Ryu, H. & Jang, G.E. Field emission characteristics of CNTs synthesized by bias-assisted ICPHFCVD and ICPCVD techniques. Journal of Materials Science: Materials in Electronics 13, 589–592 (2002). https://doi.org/10.1023/A:1020100231196
Issue Date:
DOI: https://doi.org/10.1023/A:1020100231196