Abstract
The special features of the photoluminescence of the n +‐n‐i submicron structures of gallium arsenide are investigated. It is found that the character of the dependence of the fluorescence intensity on the thickness of the structure is determined by the relationship between three characteristic lengths: diffusional length, thickness of the n + layer, and depth of absorption of exciting radiation, whereas the decrease in the mobility of charge carriers in epitaxial layers leads to an increase in the fluorescence intensity of the structure, with exciting radiation being strongly absorbed.
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Emel'yanenko, Y.S., Malyshev, S.A. Photoluminescence of the n+‐n‐i Submicron Structures of Gallium Arsenide. Journal of Applied Spectroscopy 68, 299–303 (2001). https://doi.org/10.1023/A:1019276421657
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DOI: https://doi.org/10.1023/A:1019276421657