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Photoluminescence studies of thermal impurity diffused porous silicon layers

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Abstract

Porous silicon layers were formed on diffused layers. Both boron and phosphorus impurities were thermally diffused using solid sources in n-Si, p-Si, n-epi/Si and p-epi/Si substrates of various resistivities. Porous silicon on these layers was formed by electrochemical and chemical etching under various etching conditions. Strong visible luminescence was observed from these porous silicon structures. Infrared absorption studies indicated that surface molecule identities are immaterial to the enhancement or degradation of photoluminescence.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Orlando, FL, 32816, USA

    K. B SUNDARAM & S. A ALI

  2. Department of Physics, University of Central Florida, Orlando, FL, 32816, USA

    R. E PEALE & W. A McCLINTIC JR

Authors
  1. K. B SUNDARAM
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  2. S. A ALI
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  3. R. E PEALE
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  4. W. A McCLINTIC JR
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SUNDARAM, K.B., ALI, S.A., PEALE, R.E. et al. Photoluminescence studies of thermal impurity diffused porous silicon layers. Journal of Materials Science: Materials in Electronics 8, 163–169 (1997). https://doi.org/10.1023/A:1018594113294

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