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{7 6 6} Oriented V-groove surfaces on Br2–CH3OH etched (1 0 0) GaAs wafers

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Abstract

Etched V-grooves on (1 0 0) gallium arsenide crystal surfaces produced using various compositions of bromine-in-methanol etchant are bounded by sidewall surfaces, presumably of Ga atoms, aligned along the original {7 6 6} position of the bulk crystal as determined by optical and electron microscope observations. The measurements are tentatively explained by rotational surface reconstruction of Ga-deficient, rehybridized {1 1 1} planes.

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Authors and Affiliations

  1. Department of Electrical Engineering/Joint Program for Advanced Electronic Materials, College Park, MD, 20742, USA

    S. W. WILSON & M DAGENAIS

  2. Department of Mechanical Engineering, University of Maryland, College Park, MD, 20742, USA

    R. W ARMSTRONG

  3. Laboratory for Physical Sciences, 8050 Greenmead Drive, College Park, MD, 20740, USA

    W.T. BEARD & C. E. C WOOD

Authors
  1. S. W. WILSON
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  2. R. W ARMSTRONG
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  3. M DAGENAIS
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  4. W.T. BEARD
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  5. C. E. C WOOD
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WILSON, S.W., ARMSTRONG, R.W., DAGENAIS, M. et al. {7 6 6} Oriented V-groove surfaces on Br2–CH3OH etched (1 0 0) GaAs wafers. Journal of Materials Science: Materials in Electronics 8, 109–113 (1997). https://doi.org/10.1023/A:1018525625590

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  • DOI: https://doi.org/10.1023/A:1018525625590

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