Abstract
Randomly oriented ferroelectric BaTiO3 and (Ba0.6Sr0.4) TiO3 thin films on platinum coated Si (100) were prepared by a sol-gel method. The precursor solutions were derived from barium hydroxide or a mixture of barium/strontium hydroxides dissolved in acetic acid and titanium butoxide. Polarization versus applied voltage hysteresis studies indicated a remanent polarization of 3 µC/cm2 and a coercive field of 43.4 kV/cm for BaTiO3 films annealed at 800°C for 1 h. Corresponding parameters for (Ba0.6Sr0.4)TiO3 films annealed at 800°C were found to be 7.2 µC/cm2 and 102.7 kV/cm, respectively. Microstructural study of the surface morphology of these films indicated grains of less than 0.1 µm in size. The leakage current for (Ba0.6Sr0.4)TiO3 films was found to be two orders of magnitude lower than that for BaTiO3 films.
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Paik, D.S., Rao, A.P. & Komarneni, S. Ba Titanate and Barium/Strontium Titanate Thin Films from Hydroxide Precursors: Preparation and Ferroelectric Behavior. Journal of Sol-Gel Science and Technology 10, 213–220 (1997). https://doi.org/10.1023/A:1018312032470
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DOI: https://doi.org/10.1023/A:1018312032470