Abstract
Highly (111)-oriented lanthanum modified lead zirconate titanate (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films with the thickness of 300 nm were fabricated by a sol–gel method. Electrical measurements were conducted on (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films. Well-saturated hysteresis loops were achieved with an applied voltage of 19 V. Dielectric constant and dielectric loss as a function of frequency for (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films annealed at 670 °C were measured. Dc bias field dependence of dielectric constant and dielectric loss were conducted at room temperature; the dielectric tunability of (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin film annealed at 670 °C was 20.3 %. The pyroelectric coefficient of films was measured by a dynamic technique. The pyroelectric coefficients of (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films annealed at 570, 620 and 670 °C were 208, 244 and 192 μC/m2 K, respectively. It was found that the pyroelectric property was highly depended on the annealing temperature.
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Acknowledgments
This work was supported by the National Natural Science Foundation of China (Grant Nos. 10774030, 11032010, and 11202054), the Guangdong Provincial Natural Science Foundation of China (Grant Nos. 8151009001000003 and 10151009001000050) and the Guangdong Provincial Educational Commission of China (Grant No. 2012KJCX0044).
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Zhang, TF., Tang, XG., Liu, QX. et al. Effect of annealing temperature on dielectric and pyroelectric property of highly (111)-oriented (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films. J Mater Sci: Mater Electron 26, 1784–1788 (2015). https://doi.org/10.1007/s10854-014-2610-y
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DOI: https://doi.org/10.1007/s10854-014-2610-y