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Layer-by-Layer Growth of 4He Adsorbed on One-dimensional 18Å-Pores

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Abstract

We have measured vapor pressures (P) of 4He adsorbed on one-dimensional pores of 18 Å diameter with a sensitivity of 2×10 −3 mbar as a function of coverage down to 1.2 K. The isothermal compressibility (κT) calculated from P isotherm has two minima, which are associated with the completion of the first and the second layer. The adsorption energy was obtained quantitatively from an Arrhenius type temperature dependence of P. As the coverage is increased, the adsorption energy at T=0 per atom (Δ 0 /kB) decreases from 180 K to 35 K, followed by a clear step associated with a second layer promotion. After second layer completion, Δ 0 /kB is constant. The magnitude is the same value as the latent heat of the bulk 4He liquid (7 K). These results give us a clear picture that 4He film grows in a layer-by-layer fashion up to the second layer on one-dimensional pore walls.

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Authors and Affiliations

  1. Institute of Physics, Basic Science, Graduate School of Arts and Sciences, University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo, 153-8902, Japan

    J. Taniguchi, T. Okuno, H. Ikegami & N. Wada

  2. Toyota Central R and D Labs., Inc., Nagakute, Aichi, 480-1192, Japan

    S. Inagaki & Y. Fukushima

Authors
  1. J. Taniguchi
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  2. T. Okuno
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  3. H. Ikegami
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  4. N. Wada
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  5. S. Inagaki
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  6. Y. Fukushima
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Taniguchi, J., Okuno, T., Ikegami, H. et al. Layer-by-Layer Growth of 4He Adsorbed on One-dimensional 18Å-Pores. Journal of Low Temperature Physics 121, 537–542 (2000). https://doi.org/10.1023/A:1017594923321

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  • DOI: https://doi.org/10.1023/A:1017594923321

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