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An Ellipsometric Study of the Oxidation of Thin Copper Films in Oxygen

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Inorganic Materials Aims and scope

Abstract

The thermal oxidation of thin copper films deposited on single-crystal silicon was studied by ellipsometry. The optical properties of the oxide layers grown at 420–470 K over a period of up to 150 min were found to vary with layer thickness in a complex manner. The results were analyzed in terms of single- and two-layer models. The oxidation kinetics were shown to follow a parabolic rate law. The apparent activation energies for different stages of oxidation were evaluated with allowance for the self-organization of the interfacial layer.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394893, Russia

    A. M. Khoviv, I. N. Nazarenko & A. A. Churikov

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  1. A. M. Khoviv
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  2. I. N. Nazarenko
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  3. A. A. Churikov
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Khoviv, A.M., Nazarenko, I.N. & Churikov, A.A. An Ellipsometric Study of the Oxidation of Thin Copper Films in Oxygen. Inorganic Materials 37, 473–475 (2001). https://doi.org/10.1023/A:1017524700274

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