Abstract
High-speed, high-power photodetectors are required in 40 Gbit/s front-ends as well as for optic/millimeterwave-conversion in 60 GHz broadband mobile systems. The demand for a high bandwidth maintained up to high power levels is fulfilled by waveguide-integrated p-i-n diodes on InP. These photodetectors exhibit a cutoff frequency above 50 GHz. By monolithic integration of a spot size transformer a responsivity of 0.7 A/W is achieved and the fiber alignment tolerances are increased by one order of magnitude. Linear power behaviour up to +12 dBm at 50 GHz and maximum output voltage swings of 1 V are demonstrated.
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Umbach, A., Trommer, D., Steingrüber, R. et al. High-speed, high-power 1.55 μm photodetectors. Optical and Quantum Electronics 33, 1101–1112 (2001). https://doi.org/10.1023/A:1017510004058
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DOI: https://doi.org/10.1023/A:1017510004058