Abstract
The adsorption of acetone molecules at the surface of porous silicon is found to result in a blueshift of the photoluminescence (PL) maximum by 50–90 nm, depending on the time of exposure to acetone vapor (1 to 15.5 h). Under UV laser excitation, the PL intensity in the samples exposed to acetone vapor initially decreases and then rises, reaching a level which is substantially higher than that before the exposure to acetone vapor. The PL spectra and the time variations of the integrated PL intensity and intensity at a fixed wavelength are thoroughly studied for the samples exposed to acetone vapor for various lengths of time. Under UV irradiation, the original PL intensity is partially restored, and the PL maximum gradually returns to its original position. A model describing the spectral characteristics and transient behavior of PL in porous silicon is proposed.
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Orlov, A.M., Skvortsov, A.A. & Sindyaev, A.V. Influence of Acetone Vapor on the Photoluminescence Behavior of Porous Silicon. Inorganic Materials 37, 429–435 (2001). https://doi.org/10.1023/A:1017504228499
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DOI: https://doi.org/10.1023/A:1017504228499