Abstract
The available data on the solubility of some chemical elements in SiC are analyzed, and the diffusion parameters of these elements are assessed using the compensation law.
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REFERENCES
Safaraliev, G.K., Sukhanek, G.K., Tairov, Yu.M., and Tsvetkov, V.F., Criteria for the Formation of SiC-Based Solid Solutions, Izv. Akad. Nauk SSSR, Neorg. Mater., 1986, vol. 22, no. 11, pp. 1839–1841.
Sorokin, N.D., Approaches to Evaluating Parameters of Atomic Diffusion in Minerals, Geokhimiya, 1992, no. 5, pp. 619–629.
Safaraliev, G.K., General Tendencies in the Formation and Physical Properties of SiC-Based Semiconductor Solid Solutions, Doctoral (Phys.–Math.) Dissertation, Baku: Inst. of Physics, Az. SSR Acad. Sci., 1988.
Urusov, V.S., Teoriya izomorfnoii smesimosti (Theory of Isomorphous Miscibility), Moscow: Nauka, 1977.
Safaraliev, G.K., Tairov, Yu.M., Tsvetkov, V.F., and Shabanov, Sh.Sh., Solubility and Diffusion in the Systems SiC–NbC, SiC–TiC, and SiC–ZrC, Pis'ma Zh. Tekh Fiz., 1991, vol. 17, no. 23, pp. 80–83.
Spravochnik po elektrotekhnicheskim materialam (Handbook of Electrotechnical Materials), Koritskii, Yu.V., Pasynkov, V.V., and Tareev, B.M., Eds., Leningrad: Energoatomizdat, 1988, vol. 3.
Mokhov, E.N., Gornushkina, E.D., Didin, V.A., and Kozlovskii, V.V., Phosphorus Diffusion in Silicon Carbide, Fiz. Tverd. Tela (S.-Peterburg), 1992, vol. 34, no. 6, pp. 1956–1958.
Nurmagomedov, Sh.A., Sorokin, N.D., Safaraliev, G.K., et al., Preparation of (SiC)1-x (AlN)xEpilayers, Izv. Akad. Nauk SSSR, Neorg. Mater., 1986, vol. 22, no. 10, pp. 1672–1674.
Shabanov, Sh.Sh., Preparation and Properties of SiCBased Ceramics, Cand. Sci. (Eng.) Dissertation, St. Petersburg: St. Petersburg State Electrotechnical Inst., 1993.
Sorokin, N.D., Tairov, Yu.M., and Tsvetkov, V.F., X-ray Emission Spectroscopic Study of SiC–GaN and SiC– AlN Solid Solutions, III Vsesoyuznyi simpozium po rastrovoi elektronnoi mikroskopii i analiticheskim metodam tverdyk tel (III All-Union Symp. on Scanning Electron Microscopy and Its Application in Analysis of Solids), Moscow: Nauka, 1981, p. 227.
Safaraliev, G.K., Bilalov, B.A., and Efendiev, A.Z., Electrocrystallization of Silicon Carbide, Zh. Tekh. Fiz. 1984, vol. 54, no. 10, pp. 2016–2020.
Safaraliev, G.K., Tairov, Yu.M., and Tsvetkov, V.F., Formation of SiC–BeO Solid Solutions during Hot Pressing, Neorg. Mater., 1992, vol. 28, no. 4, pp. 789–792.
Safaraliev, G.K., Tairov, Yu.M., Tsvetkov, V.F., et al. Preparation and Properties of Polycrystalline SiC–AlN Solid Solutions, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1993, vol. 27, no. 3, 402–403.
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Safaraliev, G.K., Ofitserova, N.V., Bilalov, B.A. et al. SiC-Based Solid Solutions. Inorganic Materials 38, 674–676 (2002). https://doi.org/10.1023/A:1016284207358
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DOI: https://doi.org/10.1023/A:1016284207358