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Solubility of Impurities in Silicon Carbide during Vapor Growth

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Abstract

The atomic displacements and the chemical and deformation contributions to the change in the bond energy of Group III–V substitutional impurities in β-SiC were calculated by Harrison's bonding-orbital method. The results were used to determine the lattice parameter as a function of doping level and the solubility of impurities in SiC under both equilibrium and nonequilibrium conditions on different growth surfaces. The calculation results agree well with experimental data.

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Authors and Affiliations

  1. St. Petersburg State Electrotechnical University, ul. professora Popova 5, St. Petersburg, 197376, Russia

    I. I. Parfenova, S. A. Reshanov & V. P. Rastegaev

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  1. I. I. Parfenova
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  2. S. A. Reshanov
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  3. V. P. Rastegaev
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Parfenova, I.I., Reshanov, S.A. & Rastegaev, V.P. Solubility of Impurities in Silicon Carbide during Vapor Growth. Inorganic Materials 38, 476–481 (2002). https://doi.org/10.1023/A:1015471021894

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