Abstract
In depositing thin PbTe<Ga> films onto Si substrates by a modified hot-wall method, Pb1 – x Ga x melts were used as Ga vapor sources in combination with separate Pb and Te sources. Data on the vaporization behavior of Pb1 – x Ga x melts were used to devise a new technique for reproducible growth of PbTe<Ga>/Si and PbTe<Ga>/SiO2 /Si structures. The lattice parameter of the PbTe<Ga> films was found to vary nonmonotonically with Ga content, which was interpreted as evidence that the dopant can be incorporated by different mechanisms. Conductivity and Hall effect measurements between 77 and 300 K reveal a nonmonotonic variation of carrier concentration with doping level and suggest that Ga is an amphoteric impurity in narrow-gap IV–VI semiconductors.
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Ugai, Y.A., Samoilov, A.M., Buchnev, S.A. et al. Ga Doping of Thin PbTe Films on Si Substrates during Growth. Inorganic Materials 38, 450–456 (2002). https://doi.org/10.1023/A:1015410703238
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DOI: https://doi.org/10.1023/A:1015410703238