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Influence of Thermal Annealing on the Electrical and Gas-Sensitive Properties of MOS Silicon-Based Tunnel Diodes

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Abstract

Results of an experimental investigation into the influence of short-term (10 min) thermal annealing of MOS tunnel diodes on their electrical properties and capacitance, admittance, and flat-band voltage responses to the action of hydrogen are presented. Thermal annealing was performed in vacuum and in the room atmosphere at 573, 613, 653, and 673 K. Vacuum annealing at the temperatures studied was found to decrease the flat-band voltage and dramatically increase the capacitance and admittance responses. As-vacuum-annealed MOS diodes can be used as gas-sensitive elements at zero voltage. Annealing in the room atmosphere produces roughly the same effects at 573 K. As the annealing temperature is increased to 613 K, the gas-sensitive properties of MOS diodes are drastically impaired.

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Authors and Affiliations

  1. Siberian Physicotechnical Institute at Tomsk State University, Russia

    V. I. Gaman, V. I. Balyuba, V. Yu. Gritsyk, T. A. Davydova, V. M. Kalygina & L. S. Khludkova

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  1. V. I. Gaman
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  2. V. I. Balyuba
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  3. V. Yu. Gritsyk
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  4. T. A. Davydova
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  5. V. M. Kalygina
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  6. L. S. Khludkova
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Gaman, V.I., Balyuba, V.I., Gritsyk, V.Y. et al. Influence of Thermal Annealing on the Electrical and Gas-Sensitive Properties of MOS Silicon-Based Tunnel Diodes. Russian Physics Journal 44, 1133–1138 (2001). https://doi.org/10.1023/A:1015355121352

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  • DOI: https://doi.org/10.1023/A:1015355121352

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