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Features of Segregation of Doping Impurities of V(a) Subgroup Elements on Angular Configurations of the Silicon/Silicon Dioxide Oxidation Boundary

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Abstract

On the basis of computer simulation of the physicochemical process of segregation of doping impurities implanted in the basic material (silicon), the features of ejection of V(a) subgroup elements (phosphorus, arsenic, and antimony) on the angular configurations of the silicon/silicon dioxide oxidation boundary are investigated.

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REFERENCES

  1. A. G. Tarnavskii, S. I. Shpak, and M. S. Obrekht, Vych. Met. Program., 2, No. 1, 12–26 (2001). http://www.srcc.msu.su/num-meth.

    Google Scholar 

  2. C. P. Ho and J. D. Plumber, J. Electrochem. Soc., 126, No. 9, 1516–1522 (1979).

    Google Scholar 

  3. C. P. Ho and J. D. Plumber, J. Electrochem. Soc., 126, No. 9, 1523–1530 (1979).

    Google Scholar 

  4. C. P. Ho, J. D. Plumber, and J. D. Meindl, J. Electrochem. Soc., 125, No. 4, 665–671 (1978).

    Google Scholar 

  5. D. Chin, S. Y. Oh, S. M. Hu, R. W. Dutton, and J. L. Moll, IEEE Trans., Elec. Dev., ED-30, No. 7, 744–749 (1983).

    Google Scholar 

  6. C. S. Rafferty, Stress Effects in Silicon Oxidation. Simulation and Experiments, Doctoral Dissertation, Stanford Univ., Stanford, CA (1989).

    Google Scholar 

  7. V. I. Kol'dyaev, V. A. Moroz, and S. A. Nazarov, Avtometriya, No. 3, 46–54 (1988).

  8. V. N. Chebotin, Physical Chemistry of Solids [in Russian], Moscow (1982).

  9. G. É. Tsyrlin, P. Werner, G. Gosele, B. V. Volovik, V. M. Ustinov, and N. N. Ledentsev, Pis'ma Zh. Tekh. Fiz., 27, Issue 1, 31–38 (2001).

    Google Scholar 

  10. E. V. Astrova, V. V. Ratnikov, A. D. Remenyuk, A. G. Tkachenko, and I. L. Shul'pina, Pis'ma Zh. Tekh. Fiz., 27, Issue 2, 1–8 (2001).

    Google Scholar 

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Authors and Affiliations

  1. Institute of Theoretical and Applied Mechanics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk

    G. A. Tarnavskii & S. I. Shpak

  2. University of Waterloo, Ontario, Canada

    M. S. Obrecht

Authors
  1. G. A. Tarnavskii
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  2. S. I. Shpak
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  3. M. S. Obrecht
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Tarnavskii, G.A., Shpak, S.I. & Obrecht, M.S. Features of Segregation of Doping Impurities of V(a) Subgroup Elements on Angular Configurations of the Silicon/Silicon Dioxide Oxidation Boundary. Journal of Engineering Physics and Thermophysics 75, 190–197 (2002). https://doi.org/10.1023/A:1014899513540

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  • DOI: https://doi.org/10.1023/A:1014899513540

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