Skip to main content
Log in

Silicon Wafer Bonding by Chemical Assembly of a Surface by Molecular Layering and Gas Cutting

  • Published:
Atomic Energy Aims and scope

Abstract

It is suggested that chemical and heat treatment of surfaces under moist conditions (including also chemical assembly of a surface by molecular layering) and gas-cutting be used to fabricate silicon on insulator structures to obtain silicon wafer surfaces with prescribed chemical composition, activation, and surface modification.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

REFERENCES

  1. V. F. Reutov and Sh. Sh. Ibragimov, “Method for fabricating thin silicon wafers,” USSR Inventor's Certificate No. 1282757, December 30, 1983.

  2. Z. Yu. Gotra, Handbook of Technology of Microelectronic Devices, Radio i Svyaz', Moscow (1991).

    Google Scholar 

  3. M. Bruel, “Smart-cut technology: basic mechanisms and applications NATO,” in: Proceedings of Conference on Advanced Research Workshop: Perspectives, Science, and Technologies for Novel Silicon on Insulated Devices, Kiev, October 12-15, 1989, Vol. 1, p. 9.

    Google Scholar 

  4. E. P. Prokop'ev, S. P. Timoshenkov, A. L. Suvorov, et al., “Special features of the technology for fabricating silicon on insulator structures by direct bonding of silicon wafers and monitoring their quality,” Preprint 24-00, Institute of Theoretical and Experimental Physics (2000).

  5. A. L. Suvorov, Yu. A. Chaplygin, S. P. Timoshenkov, et al., “Analysis of advantages, prospects for applications and technologies for producing silicon on insulator structures,” Preprint 27-00, Institute of Theoretical and Experimental Physics (2000).

  6. W. Maszara, G. Goetz, A. Cavigilia, and J. Kitterick, “Bonding of silicon wafers for silicon on insulator,” J. Appl. Phys., 64, No. 10, 1943-1950 (1986).

    Google Scholar 

  7. R. Stengl, T. Tan, and U. Gosele, “A model for silicon wafer bonding process,” ibid., 28, No. 10, 735-741 (1989).

    Google Scholar 

  8. Sensor Technology Devices, Artech House, Boston (1994), pp. 157-201.

  9. V. B. Alekskovskii, Chemistry of Supermolecular Compounds, Izd. St. Petersburg. Universiteta, St. Petersburg (1996).

    Google Scholar 

  10. Q. Tong and U. Gosele, “A model of low temperature wafer bonding and its applications,” J. Electrochem. Soc., 143, No. 5, 1773-1779 (1996).

    Google Scholar 

  11. Q. Tong and U. Gosele, “Wafer bonding and layer for microsystem,” Adv. Mater., 11, No. 17, 1409-1425 (1999).

    Google Scholar 

  12. Q. Tong and U. Gosele, Semiconductor Wafer Bonding: Science, Technology, John Wiley, New York (1988).

    Google Scholar 

  13. V. P. Popov, “Production of silicon on insulator structures for ultralarge integrated circuits,” Izv. Vyssh. Uchebn. Zaved. Élektron., No. 5, 22-26 (1998).

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Suvorov, A.L., Grafutin, V.I., Zaluzhnyi, A.G. et al. Silicon Wafer Bonding by Chemical Assembly of a Surface by Molecular Layering and Gas Cutting. Atomic Energy 91, 793–800 (2001). https://doi.org/10.1023/A:1013888021077

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/A:1013888021077

Keywords

Navigation