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InAs Quantum Dots On (001) GaAs Substrate with two Groups of Different Sizes Under Arsenic Shutter Closed Condition

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Abstract

The effect of temperature on the self-assembled InAs quantum dots (QDs) grown on GaAs substrate under arsenic shutter closed condition has been studied. From atomic force microscopy (AFM), it was found that the size of InAs dots exhibited a transition from single-sized uniformly distributed quantum dot (QD) at a growth temperature of 490°C to two groups of different sizes QDs at 510°C. Since the desorption rate of In atoms from the substrate surface is very high at 510°C, a growth model is proposed that attributes the larger sized QDs to the enhanced capture of desorbed In atoms by a local random protrusion which initiates a regenerative capture and growth process and leads to explosive growth.

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References

  • Chu L., M. Arzberger, G. B¨ohm & G. Absteiter, 1999. J. Appl. Phys. 85, 2355.

    Google Scholar 

  • Chang S.Z., T.C. Chang & S.C. Lee, 1993. J. Appl. Phys. 73, 4916.

    Google Scholar 

  • Dai Y. T., J. C. Fan, Y.F. Chen, R.M. Lin, S.C. Lee & H.H. Lin, 1997. J. Appl. Phys. 82, 4489.

    Google Scholar 

  • Grundmann M., N. Ledenstov, R. Heitz, L. Eckey, J. Christen, J. Bohrer, D. Bimberg, S. Ruvimov, P. Werner, U. Richter, J. Heydenreich, V. Ustinov, A. Egorov, A. Zhukov, P. Kopev & Z. Alferov, 1995. Phys. Status Solidi B 188, 249.

    Google Scholar 

  • Kamath K., N. Chervela, K.K. Linder, T. Sosnowski, H.T. Jiang, T. Norris, J. Singh & P. Bhattacharya, 1997. Appl. Phys. Lett. 71, 927.

    Google Scholar 

  • Kong M.-Y., Xiao-Liang, D. Pan, Y.-P. Zeng, J. Wang & Weikun Ge, 1999. J. Appl. Phys. 86, 1456.

    Google Scholar 

  • Phillips J., K. Kamath, X. Zhou, N. Chervela & P. Bhattacharya, 1997. Appl. Phys. Lett. 71, 2079.

    Google Scholar 

  • Wang X.C., S.J. Xu, S.J. Chua, Z.H. Zhang, W.J. Fan, C.H. Wang, J. Jiang & X.G. Xie, 1999. J. Appl. Phys. 86, 2687.

    Google Scholar 

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Authors and Affiliations

  1. Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

    Shiang-Feng Tang, Shih-Yen Lin & Si-Chen Lee

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  1. Shiang-Feng Tang
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  2. Shih-Yen Lin
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  3. Si-Chen Lee
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Tang, SF., Lin, SY. & Lee, SC. InAs Quantum Dots On (001) GaAs Substrate with two Groups of Different Sizes Under Arsenic Shutter Closed Condition. Journal of Nanoparticle Research 3, 489–492 (2001). https://doi.org/10.1023/A:1012563421356

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  • DOI: https://doi.org/10.1023/A:1012563421356

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