Abstract
The optical absorption induced by the photosensitive centers formed upon electron irradiation (E = 5 MeV, Φ = 1.7·1018 cm−2) of polycrystalline ZnSe has been studied. A comparison of the optical properties of the irradiated crystals with the known data for ZnS has allowed the assumption that the 496–, 563–, and 652–nm bands in ZnSe are associated with the anion vacancies being in different charge states. The ratio between the concentrations of the optical absorption centers in the crystals photoexcited at 80 K is determined by the electron traps participating in the processes of charge exchange of the vacancies.
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Okonechnikov, A.P., Kassandrov, I.N., Lifenko, V.M. et al. Charge Exchange of the Centers in Electron–Irradiated Zinc Selenide. Journal of Applied Spectroscopy 68, 637–641 (2001). https://doi.org/10.1023/A:1012530307754
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DOI: https://doi.org/10.1023/A:1012530307754