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A Radiofrequency–Optical Modulation Spectroscope for Investigating Semiconductor Structures

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Abstract

A radiofrequency –optical spectroscope that makes it possible to investigate the modulation optical reflectance spectra of the various layers of a semiconductor structure is proposed and manufactured. Near the edge of the fundamental optical absorption, the light reflectance is modulated by an RF field with various spatial orientations. By using the RF–optical modulation spectroscope, new features of the electron–hole interaction in the layers of a selectively doped GaAs/AlGaAs heterostructure are discovered and investigated.

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences (Fryazino Branch), pl. Vvedenskogo 1, Fryazino, Moscow oblast, 141120, Russia

    A. O. Volkov & O. A. Ryabushkin

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  1. A. O. Volkov
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  2. O. A. Ryabushkin
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Volkov, A.O., Ryabushkin, O.A. A Radiofrequency–Optical Modulation Spectroscope for Investigating Semiconductor Structures. Instruments and Experimental Techniques 44, 685–689 (2001). https://doi.org/10.1023/A:1012366111677

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