Abstract
Pure, Pd and Os modified SnO2 films were prepared by the sol gel process and used as active materials in gas sensing devices. The films have been prepared starting from tin tetrachloride in alcoholic solution hydrolysed with water. The modifier was added to the sol as inorganic salt. Pd acetate and Os chloride were the Pd and Os precursors respectively. A structural and morphological study was carried out by means of Atomic Force Microscope (AFM), Secondary Ion Mass Spectrometer (SIMS) and x-ray Diffraction (XRD). The electrical resistance variations as a function of various gaseous atmospheres and temperature were measured to evaluate the sensing properties of the films. CO, CH4, CH3OH and C2H5OH gases were used for the tests. Following results were obtained: Pd is present in the form of PdO nanoclusters in the polycrystalline SnO2 matrix as evidenced by XRD spectra whereas Os is a cationic modifier uniformly dispersed as evidenced in SIMS studies. Optimum sensing temperature and the sensitivity variations, with respect to the undoped films, differ according to the gaseous species. It looks therefore promising to use inexpensive, sol-gel derived, array of films in smart gas sensing devices that are able to recognise gas species and concentration.
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Licciulli, A., Mazzarelli, S., De, G. et al. Os and Pd Modified Tin Oxide Films for Sensors by the Sol Gel Process. Journal of Sol-Gel Science and Technology 21, 195–201 (2001). https://doi.org/10.1023/A:1011278403713
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DOI: https://doi.org/10.1023/A:1011278403713