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RHEED Intensity Oscillations for the Stoichiometric Growth of SrTiO3 Thin Films by Reactive Molecular Beam Epitaxy

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Abstract

The growth of high quality multicomponent oxide thin films by reactive molecular beam epitaxy (MBE) requires precise composition control. We report the use of in situ reflection high-energy electron diffraction (RHEED) for the stoichiometric deposition of SrTiO3 (1 0 0) from independent strontium and titanium sources. By monitoring changes in the RHEED intensity oscillations as monolayer doses of strontium and titanium are sequentially deposited, the Sr:Ti ratio can be adjusted to within 1% of stoichiometry. Furthermore, the presence of a beat frequency in the intensity oscillation envelope allows the adjustment of the strontium and titanium fluxes so that a full monolayer of coverage is obtained with each shuttered dose of strontium or titanium. RHEED oscillations have also been employed to determine the doping concentration in barium- and lanthanum-doped SrTiO3 films.

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Haeni, J., Theis, C. & Schlom, D. RHEED Intensity Oscillations for the Stoichiometric Growth of SrTiO3 Thin Films by Reactive Molecular Beam Epitaxy. Journal of Electroceramics 4, 385–391 (2000). https://doi.org/10.1023/A:1009947517710

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  • DOI: https://doi.org/10.1023/A:1009947517710

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