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Etching of Gallium Arsenide in a Cl2 + H2 Plasma

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Abstract

The effect of external discharge parameters and the composition of a plasma-forming Cl2 + H2 mixture on electrophysical plasma characteristics and GaAs etching are studied. Mechanisms of volume and heterogeneous processes are considered. It is shown that high-rate cleaning of active surface centers due to ion- and radiation-stimulated desorption of interaction products is responsible for the extremum in the dependence of the etch rate on the plasma composition.

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Authors and Affiliations

  1. Ivanovo State University of Chemical Technology, pr. Engel'sa 7, Ivanovo, 153460, Russia

    A. M. Efremov & A. V. Antonov

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  1. A. M. Efremov
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  2. A. V. Antonov
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Efremov, A.M., Antonov, A.V. Etching of Gallium Arsenide in a Cl2 + H2 Plasma. Russian Microelectronics 30, 1–6 (2001). https://doi.org/10.1023/A:1009437821507

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