Abstract
The effect of enhanced generation of states at the Si/SiO2 interface was first observed in polySi-gate MIS structures successively subjected to UV and X-ray radiations. It was studied on test MIS transistors of series-produced ICs by the methods of subthreshold currents, charge pumping currents, and internal photoemission. A possible reason for enhanced generation of the states is the presence of hydrogen at the interface with the polySi gate. Under UV irradiation, the hydrogen diffuses toward the substrate and causes surface state generation under subsequent irradiation by X-rays.
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REFERENCES
Ma, T.P. and Dressendorfer, P.V., Ionizing Radiation Effects in MOS Devices and Circuits, New York: Wiley, 1989.
Vavilov, V.S., Gorin, B.M., Danilin, N.S., Kiv, A.E., Nurov, Yu.L., and Shakhovtsov, V.I., Radiatsionnye metody v tverdotel'noi elektronike (Radiation Methods in Solid-State Electronics), Moscow: Radio i Svyaz', 1990.
Pershenkov, V.S., Popov, V.D., and Shal'nov, A.V., Poverkhnostnye radiatsionnye effekty v IMS (Radiation-Induced Surface Effects in Integrated Circuits), Moscow: Energoatomizdat, 1988.
Sze, S.M., VLSI Technology, New York: McGraw-Hill, 1983, vol. 1. Translated under the title Tekhnologiya SBIS, Moscow: Mir, 1986.
Levin, M.N., Kadmenskii, S.G., Tatarintsev, A.V., Litmanovich, V.I., and Chernyshev, V.E., Radiation-Induced Effects in Short-Channel MIS Devices, Mikroelektronika, 1992, vol. 21, no. 2, pp. 34-41.
Levin, M.N., Litmanovich, V.I., Tatarintsev, A.V., and Chernyshev, V.V., Direct Method for Finding the Surface State Density from Charge Pumping Currents, Fiz. Tekh. Poluprovodn. (St. Petersburg), 1993, vol. 27, no. 1, pp. 3-11.
Sakharov, B.N., Levin, M.N., Gol'dfarb, V.A., and Synorov, V.F., USSR Inventor's Certificate no. 1200769, June 15, 1984.
Sakharov, B.N., Smirnova, O.N., and Gol'dfarb, V.A., Emission in MIS Structures with Regard for Oxide-Localized Charge, Mikroelektronika, 1981, vol.10, no. 5, pp. 463-466.
Levin, M.N., Sakharov, B.N., and Gol'dfarb, V.A., The Effect of Field in Gate Dielectric on Photoemission Current in MIS Structures, Mikroelektronika, 1984, vol. 13, no. 1, pp. 47-50.
Nicollian, E.H., Berglund, C.N., Schmidt, P.E., and Andrews, J.M., Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents, J. Appl. Phys., 1971, vol. 42, no. 13, pp. 5654-5664.
Griscom, D.L., Diffusion of Radiolytic Molecular Hydrogen as a Mechanism for the Post-Irradiation Buildup of Interface States in SiO2-on-Si Structures, J. Appl. Phys., 1985, vol. 58, no. 7, pp. 2524-2533.
Gorelkinskii, Yu.V., Nevinnyi, N.N., and Lyuts, E.A., Hydrogen Transport in Submicron SiO2 Layers on Si, Fiz. Tekh. Poluprovodn. (St. Petersburg), 1994, vol. 28, no. 1, pp. 41-47.
Swank, J.R., Fleetwood, D.M., Winokur, P.S., Dressendorfer, P.V., Turpin, D.C., and Sanders, D.T., The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS Devices, IEEE Trans. Nucl. Phys., 1987, vol. 34, no. 6, pp. 1152-1157.
Saks, N.S. and Brown, D.B., Interface Trap Formation Via the Two-Stage H+ Process, IEEE Trans. Nucl. Phys., 1989, vol. 36, no. 6, pp. 1848-1857.
Mrstik, B.J. and Rendell, R.W., Si-SiO2 Interface State Generation during X-ray Irradiation and during Post-Irradiation Exposure to a Hydrogen Ambient, IEEE Trans. Nucl. Phys., 1991, vol. 38, no. 6, p. 1101.
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Levin, M.N., Bormontov, E.N., Volkov, O. et al. Enhanced Generation of Interface States in MIS IC Elements under the Action of UV and X-ray Radiations. Russian Microelectronics 30, 12–16 (2001). https://doi.org/10.1023/A:1009409522416
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DOI: https://doi.org/10.1023/A:1009409522416