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The interface properties of Ar-annealed nitrided oxides

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Abstract

The gate–oxide interface properties as well as the oxide–substrate interface properties of MOS capacitors with various nitridation conditions were studied. For comparison, samples were annealed in O2 and Ar ambients. Experimental results show that both annealing ambients yield similar interface density and electron traps on the oxide–substrate interface. However, Ar-annealed nitrided oxides have higher capacitance and fewer electron traps on the gate–oxide interface.

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Authors and Affiliations

  1. Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan

    Chau-Yun Hsiang, Hsun-Hsiang Chen, Shien-Hung Tseng & Jeng Gong

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  1. Chau-Yun Hsiang
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  2. Hsun-Hsiang Chen
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  3. Shien-Hung Tseng
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  4. Jeng Gong
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Hsiang, CY., Chen, HH., Tseng, SH. et al. The interface properties of Ar-annealed nitrided oxides. Journal of Materials Science: Materials in Electronics 9, 83–85 (1998). https://doi.org/10.1023/A:1008999421554

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