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Barrier layer effect of titanium-tungsten on the electromigration in sputtered copper films on polyimide

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Abstract

Titanium-tungsten is employed as the diffusion barrier in a Cu/barrier/polyimide/Si system. The electromigration damage (EMD) of Cu with a TiW barrier is investigated utilizing an empirical formula. Two activation energies are obtained suggesting a surface electromigration mechanism at low temperature (140–190 °C) and a combined migration mechanism at high temperature (190–230 °C). The presence of the TiW barrier layer improves the high temperature electromigration resistance. The effects of the TiW barrier on the microstructure and electrical properties of Cu metallization are discussed.

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Authors and Affiliations

  1. Institute of Electro-Physics, National Chiao-Tung University, Hsinchu, Taiwan

    Hsueh-Wen Wang

  2. Institute of Electro-Physics and Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan

    Bi-Shiou Chiou

Authors
  1. Hsueh-Wen Wang
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  2. Bi-Shiou Chiou
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Wang, HW., Chiou, BS. Barrier layer effect of titanium-tungsten on the electromigration in sputtered copper films on polyimide. Journal of Materials Science: Materials in Electronics 11, 17–24 (2000). https://doi.org/10.1023/A:1008995902371

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