Abstract
Typical thick film pastes applied for the metallization of AlN-ceramics are glass bonding systems. The glass phase responsible for adhesion onto the ceramic unfortunately also acts as a heat barrier and impairs the excellent thermal conductivity of AlN. A new glass frit free conductor paste has been especially developed for the metallization of AlN. A numerical analysis of the stress distribution within the metallized ceramic induced by a continuous as well as a pulsed mode operating heat source has been conducted for this new metallization paste and, for comparison purpose, also for a standard thick film paste by means of a finite element program. In order to determine the physical property data of the phases occurring at the interface between metallization and substrate required for numerical simulation the relevant intermetallic samples have been synthesized.
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Reicher, R., Smetana, W., Gruber, E.U. et al. Bonding mechanism and stress distribution of a glass frit free thick film metallization for AlN-ceramic. Journal of Materials Science: Materials in Electronics 9, 429–434 (1998). https://doi.org/10.1023/A:1008985505140
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DOI: https://doi.org/10.1023/A:1008985505140