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Kinetic Monte Carlo method for dislocation glide in silicon

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Journal of Computer-Aided Materials Design

Abstract

A kinetic Monte Carlo (KMC) approach to the mesoscale simulation of dislocation glide via the kink mechanism is developed. In this paper we present the details of the KMC methodology, highlighting three features: (1) inclusion of dislocation dissociation; (2) efficient method of sampling the double-kink nucleation process; and (3) exact calculation of dislocation segment interactions.

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Cai, W., Bulatov, V.V. & Yip, S. Kinetic Monte Carlo method for dislocation glide in silicon. Journal of Computer-Aided Materials Design 6, 175–183 (1999). https://doi.org/10.1023/A:1008730124719

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  • DOI: https://doi.org/10.1023/A:1008730124719

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