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Enhanced Third-Order Nonlinearity in Semiconductors Giving Rise to 1 THz Radiation

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Abstract

Third harmonic generation (THG) efficiency is shown to be a greatly enhanced at the onset of inelastic scattering of electrons on optic phonons. Scaling experiments are performed on n-type InP at the pump wave frequency of 9.43 GHz at 80 K. Monte Carlo modeling is employed for scaling the effect to the 3rd harmonic frequency of 1 THz. The THG efficiency in n-type GaAs and InP as well as in the wurtzite phase of n-type InN and GaN compound crystals is compared to that in n-type Si. The efficiency maximum is found to weaken due to the quasi-elastic scattering on acoustic phonons and elastic scattering on ionized impurities. Nevertheless, the THG efficiency at 1 THz in InP crystals cooled down to liquid nitrogen temperatures is predicted to be 2 orders of magnitude higher than the reference value of 0.1% experimentally recorded up to now in n-type Si.

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References

  1. M. R. Siegrist, H. Bindslev, R. Brazis, D. Guyomarc'h, J. P. Hogge, Ph. Moreau, R. Raguotis, Infrared Physics and Technology, 40, p. 247 (1999).

    Google Scholar 

  2. M. Urban, M. R. Siegrist, L. Asadauskas, R. Raguotis, and R. Brazis, Lithuanian J. Phys. 35, p. 430 (1995).

    Google Scholar 

  3. M. Urban, M. R. Siegrist, L. Asadauskas, R. Raguotis, and R. Brazis, Appl. Phys. Lett. 69, p. 1776 (1996).

    Google Scholar 

  4. R. Brazis, R. Raguotis and M. R. Siegrist, J. Appl. Phys. 84, p. 3474 (1998).

    Google Scholar 

  5. R. Brazis, R. Raguotis, Ph. Moreau and M. R. Siegrist, in: The 23rd Int. Conf. IR and MM Waves, Colchester, September 7–11, 1998, Conference Digest, T.J. Parker and S.P.R. Smith, Eds., Univ. Essex, 1998, p. 280–281.

  6. Ph. Moreau, M. R. Siegrist, R. Brazis and R. Raguotis, Material Science Forum, 297–298, p. 315 (1999).

    Google Scholar 

  7. R. Brunetti, C. Jacoboni, T. Nava, L. Reggiani, G. Bosman and R. J. Zijlstra, J. Appl. Phys. 52, p. 6713 (1981).

    Google Scholar 

  8. A. Dargys, J. Kundrotas. Handbook on physical properties of Ge, Si, GaAs and InP, Sci. and Encyclopedia Publishers, Vilnius, 1994, 266 p.

    Google Scholar 

  9. K. Brennan and P. K. Hess, Solid State Electronics, 25, p. 589 (1982).

    Google Scholar 

  10. A. Mayer and F. Keilmann, Phys. Rev. B33, p. 6962 (1989).

    Google Scholar 

  11. B. Ridley, Quantum Processes in Semiconductors, University Press, Oxford, 1982.

    Google Scholar 

  12. S. K. O'Learly, B. E. Foutz, M. S. Shur, and U. V. Bhapkar, J. Appl. Phys. 83, p. 826 (1998).

    Google Scholar 

  13. M. S. Shur, Solid-State Electronics, 42, p. 2131 (1998).

    Google Scholar 

  14. J. Kolík, Í. H. Oğuzman, K. F. Brennan, R. Wang, P. P. Ruden, and Y. Wang, J. Appl. Phys. 78, p. 1033 (1995).

    Google Scholar 

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Author notes

  1. M. R. Siegrist

    Present address: Centre de Recherche en Physique des Plasmas, Ecole Polytechnique Fédérale de Lausanne; PPB Ecublens, 1015, Lausanne, Switzerland

Authors and Affiliations

  1. Semiconductor Physics Institute, A. Goštauto 11, 2600, Vilnius, Lithuania

    R. Brazis & R. Raguotis

  2. CE Cadarache DRFC/SCCP Bat 507, F-13108, St Paul les Durance, France

    Ph. Moreau

  3. JET-EFDA Close Support Unit, UKAEA Fusion, Culham Science Centre, Abingdon, OX14 3DB, United Kingdom

    M. R. Siegrist

Authors
  1. R. Brazis
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  2. R. Raguotis
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  3. Ph. Moreau
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  4. M. R. Siegrist
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Brazis, R., Raguotis, R., Moreau, P. et al. Enhanced Third-Order Nonlinearity in Semiconductors Giving Rise to 1 THz Radiation. International Journal of Infrared and Millimeter Waves 21, 593–602 (2000). https://doi.org/10.1023/A:1006635920911

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