Abstract
The microstructure of alumina after Ti ion implantation has been investigated. A metal vapourvacuum arc (MEVVA) ion source was employed to implant Ti ions into alumina with doses of7.6 × 1016 and 3.1 × 1017 ions/cm2 at 40 kV. Scanning electronmicroscopy (SEM) of the irradiated surfaces revealed topographical changes, which were dependent ondose. The implanted layer was also characterised by Rutherford backscattering (RBS) andcross-sectional transmission electron microscopy (XTEM) which showed the lower Ti dose resulted in ahighly defective surface layer. In contrast, TiO2 precipitates in anamorphous matrix were observed at the higher dose.
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Ji, H., Evans, P.J. & Samandi, M. Microstructural characterisation of alumina with Ti ion implantation. Journal of Materials Science 35, 3681–3684 (2000). https://doi.org/10.1023/A:1004898521215
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DOI: https://doi.org/10.1023/A:1004898521215