Abstract
Microstructural parameters (interatomic distances, coordination numbers, and their anisotropy) of heterostructures with Ge nanoclusters and thin films were determined by EXAFS spectroscopy. The variation of these parameters is correlated to the morphology of the germanium quantum points on Si(001), and adequate structural models are suggested. It is found that the pseudomorphic four-monolayer germanium films buried in a Si matrix contain up to 50% Si atoms. The pyramidal germanium islands (lateral size ∼15 nm, height ∼1.5 nm) formed during further Stranski–Krastanov heteroepitaxial growth have a thinner Ge–Si intermediate boundary layer near two monolayers and Ge–Ge interatomic distances 0.04 Å shorter than those in pure germanium in agreement with the results of bond length calculations in the framework of the valence force field (VFF) model.
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Érenburg, S.B., Bausk, N.V., Nenashev, A.V. et al. Microscopic Parameters of Heterostructures with Ge Nanoclusters and Thin Films in a Si Matrix. Journal of Structural Chemistry 41, 802–808 (2000). https://doi.org/10.1023/A:1004810202486
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DOI: https://doi.org/10.1023/A:1004810202486