Abstract
The chemical vapour deposition of MoSi2 on plane substrates (graphite or sintered-SiC) and ceramic fibres has been studied from MoCl4–SiCl4–H2–Ar gas mixtures at 900<T<1400°C and 2<P<40 kPa, according to an experimental approach. MoSi2 is deposited as single phase coatings for 2.5<α=PSiCl4/PMoCl4<10 and 10<β=PH2/(PMoCl4+PSiCl4)<20. The deposition process appears to be thermally activated, the thermal variations of the growth rate obeying one or two Arrhenius law(s) depending on P. It seems to remain rate controlled by heterogeneous surface reactions as long as the gas flow-rate is high enough. Deposits with a smooth surface aspect and homogeneous in thickness are obtained at low T, low P and high H2-dilution. Nicalon/MoSi2/SiC and C(T300)/MoSi2/SiC microcomposites are prepared and tested in tensile loading at ambient and high temperatures. They exhibit a brittle or quasi-brittle mechanical behaviour, with no (or almost no) matrix microcracking before failure. It is anticipated that dense MoSi2 deposited by CVD may not be a suitable interphase material for SiC/SiC and C/SiC composite materials. © 1998 Kluwer Academic Publishers
Similar content being viewed by others
References
D. E. R. Kehr, J. Electrochem. Soc. 75 (1977) 511.
F. D. Gac and J. J. Petrovic,J. Amer. Ceram. Soc.68 (1985) C200.
A. G. Evans, J. Mater Sci.42 (1986) 42.
J. Lamon, C. Rechiniac, N. Lissart and P. Corne in: Proceedings of the 5th ECCM, edited by A. R. Bunsell et al., (EACM, Bordeaux, 1992) p. 895.
M. Hannache, F. Langlais and R. Naslain J. Less. Common Metals95 (1983) 221.
S. Motojima and H. Yoshida, J. Mater. Sci. Lett. 1 (1982) 23.
Idem. ibid. 1 (1989) 1323.
Y. Memromtra and N. S. Stoloff, Materials Technology Corporation (unpublished).
C. H. Reynolds, DARPA/ONR Program, Review (1990).
S. Inoue, N. Toyokura, T. Nakamura, J. Electrochem. Soc. (1983) 44 1603.
S. Inoue and T. Nakamura, Thin Solid Films173 (1989) 235.
D. E. R. Kehr, “Chemical vapor deposition of MoSi2” (The Electrochemical Society, Princeton, NJ, 1977).
G. A. West and K. W. Beeson, J. Electrochem. Soc.135 (1988) 1752.
P. J. Gaczi, ibid. 8 (1987) 32.
D. E. R. Kehr, in Proceedings of the 6th International Conferences on CVD, 75 (1977) p. 511.
O. Unal and J. J. Petrovic, J. Amer. Ceram. Soc. 73 (1990) 1752.
J.-L. Bobet, R. Naslain and C. Bernard, Journal of Chemical Vapor Deposition3[3] (1996) 223.
E. Sipp, Thesis no 483, University of Bordeaux, Bordeaux (1990).
F. Langlais and C. Prebende, in Proceedings of the 11th International Conference on CVD, edited by K. E. Spear and G. W. Cullen pp. 686-695 (Electrochemical Society Pennington, NJ, 1990) p. 686.
J. L. Bobet, Thesis no 987, University of Bodeaux, Bordeaux (1993).
J. Lamon and N. Lissart in Proceedings of the 17th Annual Conference on Composites and Advanced Ceramics, Coco Beach, FL (American Ceramic Society).
J.-L. Bobet, A. Guette, R. Naslain, N. Ji and J.-L. Lebrun, Acta Metall Mater 43[6] (1995) 2255.
S. Prouhet, F. Langlais, A. Guette, R. Naslain and J. Rey, Eur. J. Solid State Inorg. Chem. 30 (1993) 953.
F. Rebillat, Internal LCTS report (1992).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Bobet, J.L., Vignoles, G., Langlais, F. et al. On the CVD of MoSi2: an experimental study from the MoCl4–SiCl4–H2–Ar precursor with a view to the preparation of C/MoSi2/SiC and SiC/MoSi2/SiC microcomposites. Journal of Materials Science 33, 4461–4473 (1998). https://doi.org/10.1023/A:1004560232166
Issue Date:
DOI: https://doi.org/10.1023/A:1004560232166