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Some moving-boundary problems arising from a model for solid-state diffusion

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Abstract

In this paper we formulate and analyse moving-boundary problems arising from the dissociative model for impurity diffusion in a semiconductor. We consider one-dimensional surface-source and implant problems and two-dimensional diffusion under a mask edge. The diffused profiles which result exhibit a number of novel features.

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Authors and Affiliations

  1. Dept. of Theoretical Mechanics, University of Nottingham, Nottingham, NG7 2RD, U.K

    J.R. King

  2. Dept. of Mathematical Physics, University College, Galway, Ireland

    M.G. Meere

Authors
  1. J.R. King
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  2. M.G. Meere
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King, J., Meere, M. Some moving-boundary problems arising from a model for solid-state diffusion. Journal of Engineering Mathematics 31, 1–27 (1997). https://doi.org/10.1023/A:1004254724767

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  • DOI: https://doi.org/10.1023/A:1004254724767

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