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A Technological Test of the Mir-Station Orbital Flight Modes for Semiconductor Single Crystal Growth

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Abstract

By using a method for testing the microgravity conditions aboard the orbital station (OS) proposed by the authors, different effects of the main OS orbital modes on crucibleless melting and heat-transfer processes in Ge melts were revealed. Even a minimal actually attainable level of onboard variable low-frequency accelerations (4 × 10–6–2.5 × 10–5)g 0is insufficient for eliminating nonstationary forced convection in the melt. The necessity of utilizing vibration-isolation mounts for crystal-growth equipment disposition on board the OS was confirmed.

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Authors and Affiliations

  1. Institute of Chemical Problems for Microelectronics, Bol'shoi Tolmachevskii per. 5, Moscow, 109017, Russia

    A. V. Kartavykh, E. S. Kopeliovich, M. G. Mil'vidskii & V. V. Rakov

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  1. A. V. Kartavykh
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  2. E. S. Kopeliovich
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  3. M. G. Mil'vidskii
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  4. V. V. Rakov
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Kartavykh, A.V., Kopeliovich, E.S., Mil'vidskii, M.G. et al. A Technological Test of the Mir-Station Orbital Flight Modes for Semiconductor Single Crystal Growth. Instruments and Experimental Techniques 44, 100–102 (2001). https://doi.org/10.1023/A:1004145403550

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