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Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films

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Abstract

Resistive random access memory (RRAM) technology is receiving a lot of attention as one of the next-generation nonvolatile memory technologies with a simple device structure and fast operation speed. However, one of the problems that must be solved in RRAM technology is that the distribution of RRAM driving voltages of formation, SET, and RESET voltages is large. In this study, we investigated the RRAM driving voltage of formation, SET, and RESET voltages for Pt/NiO/Pt, Pt/NiO0.95/NiO/NiO0.95/Pt, and Pt/NiO0.95/Pt RRAM capacitors affected by an oxygen-deficient NiO0.95 layer. X-ray diffraction experiments confirmed that the NiO thin films exhibited reduced grain and worsened crystallinity as the oxygen vacancy concentration increased. In particular, increasing the oxygen vacancy concentration of the NiO thin films reduces the magnitude and the distribution of RRAM operating voltages of formation, SET, and RESET voltages. The decrease in RRAM operating voltages is due to the reduced Schottky barrier due to the increased oxygen vacancy concentration and the formation of a readily conducting filament due to the increased internal oxygen bonding. Additionally, it has been suggested that the reduced distribution of RRAM operating voltages is influenced by the formation volume of the conducting filament formed by increasing oxygen vacancy concentration.

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Data availability

The datasets generated and analyzed during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1A6A1A03031833).

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Authors and Affiliations

  1. Department of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea

    Eunmi Lee

  2. Department of Applied Physics and Institute of Natural Sciences, College of Applied Science, Kyung Hee University, Suwon, 446701, Republic of Korea

    Jong Yeog Son

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  1. Eunmi Lee
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Correspondence to Eunmi Lee.

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Conflict of interest

Eunmi Lee: Investigation, Data Curation, Methodology, Formal analysis, Validation, Writing-Reviewing and Editing, Supervision. Jong Yeog Son: Conceptualization, Formal analysis, Writing-Original draft preparation, Supervision.

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Lee, E., Son, J.Y. Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films. J. Korean Ceram. Soc. (2024). https://doi.org/10.1007/s43207-024-00379-9

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  • DOI: https://doi.org/10.1007/s43207-024-00379-9

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