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Ferroelectricity Based Memory Devices: New-Generation of Materials and Applications

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Abstract

The key challenges in developing non-volatile memories are to ensure their compatibility with CMOS processing and to minimize complexity. HfO2 materials have many advantages over perovskite ferroelectric materials. The memory performance, fatigue characteristics, and leakage current of HfO2 based on different doping materials have been investigated. The predominant dopants are Si Al Zr. The ferroelectric effect is notorious when the concentration of Si and Al doping is about 4%. When the content of Zr is 50%, Zr: HfO2 in FeFET with its ferroelectric layer achieved a higher memory window, and the fatigue characteristics are at least 3 orders of magnitude higher than in other devices. Recent ferroelectric breakthroughs and prospective future-generation comparisons have been concluded, which are essential for the development of ferroelectric memory devices.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea

    Yifan Hu, Taeyong Kim, Jaewoong Cho & Jiwon Choi

  2. College of Information and Communication Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea

    Junsin Yi

  3. Interdisciplinary Program in Photovoltaic System Engineering, Sungkyunkwan University, Seoul, Republic of Korea

    Matheus Rabelo & Xinyi Fan

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Hu, Y., Rabelo, M., Kim, T. et al. Ferroelectricity Based Memory Devices: New-Generation of Materials and Applications. Trans. Electr. Electron. Mater. 24, 271–278 (2023). https://doi.org/10.1007/s42341-023-00445-9

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