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Aging Mechanism of p-Type Dopingless JLFET: NBTI and Channel-Hot-Carrier Stress

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Abstract

In this work, an extensive study of the aging mechanisms of the p-type dopingless JLFET (DL JLFET) structure is reported for the first time. The negative-bias-temperature-instability (NBTI) and channel-hot-carrier (CHC) stress conditions are considered for analyzing the aging behavior of p-type DL JLFET. The variations in electrical characteristics of lightly doped DL JLFET are compared with its conventional counterpart JLFET against NBTL and CHC stress. We have shown that JLFET with heavily doped channel region exhibits higher drain current degradation under CHC stress due to high electric field and large gate leakage current. The JLFET has 19% drain current degradation due to CHC stress which is 1.7 times higher than DL JLFET. However, under NBTI stress, the DL JLFET has slightly higher drain current degradation and almost symmetric shift in \(V_{th}\) than JLFET. Hence, this study suggests that dopingless devices are superior candidate for designing aging-resilient and more reliable circuits.

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Acknowledgements

The authors would like to thank the SERB, Government of India for providing financial support (File No. EEQ/2021/001072).

Funding

The financial support was received from Science and Engineering Research Board (SERB), Government of India.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology, Patna, Bihar, 800005, India

    Meena Panchore

  2. Department of Electronics and Communication Engineering, Shri Ramdeobaba College of Engineering and Management Nagpur, Maharashtra, 440013, India

    Chithraja Rajan

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  1. Meena Panchore
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Correspondence to Meena Panchore.

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Panchore, M., Rajan, C. Aging Mechanism of p-Type Dopingless JLFET: NBTI and Channel-Hot-Carrier Stress. Trans. Electr. Electron. Mater. 24, 154–158 (2023). https://doi.org/10.1007/s42341-022-00428-2

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  • DOI: https://doi.org/10.1007/s42341-022-00428-2

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