Abstract
A novel core-source gate-all-around TFET based on InGaAs/InP heterojunction is presented in this paper. In the proposed device, the main current flow mechanism is line tunneling which occurs across a heterojunction composed of a narrow-bandgap material of source and a wide-bandgap material of channel. The off-state current and ambipolar conduction are diminished by simultaneously employing two different doping concentrations in the channel region, as well as a wide-bandgap material in drain region. We study the switching performance of the device using a calibrated numerical device simulator. The results indicate impressive performance of the proposed transistor, including an extremely steep subthreshold swing, sub 3mv/dec over 5 decades and sub 60mv/dec over 9 decades of drain current, and average subthreshold swing of about 27mv/dec, and an on-state to off-state current ratio of about 1011 at VGS = 0.3 V. The impact of variations in the device dimensions, doping and bias condition on its electrical characteristics is also studied and discussed physically.
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References
M. Saremi, A. Afzali-Kusha, S. Mohammadi, Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits. Microelec. Eng. 95, 74–82 (2012)
J. Lee, R. Lee, S. Kim, E. Park, H.-M. Kim, K. Lee, S. Kim, B.-G. Park, Fabrication methods for nanowire tunnel FET with locally concentrated Silicon-germanium channel. J. Semicond. Technol. Sci. 19(1), 18–23 (2019). https://doi.org/10.5573/JSTS.2019.19.1.018
S. Glass, N. von den Driesch, K. Narimani, D. Buca, G. Mussler, S. Mantl, Q.-T. Zhao, SiGe based line tunneling field-effect transistors. Compos. nanoélectroniques 18(1), 1–10 (2018)
S. Blaeser, S. Glass, K. Narimani, N. Driesch, S. Wirths, T. Tiedemann, S. Trellenkamp, D. Buca, Q.T. Zhao, S. Mantl, P.G.I. Pgi-, F. Jülich, Novel SiGe/Si line tunneling TFET with high I on at low V DD and constant SS. IEEE Int. Electron. Devices. Meeting. IEDM. 9(2), 608–611 (2015)
A.M. Walke, A. Vandooren, R. Rooyackers, D. Leonelli, A. Hikavyy, R. Loo, A.S. Verhulst, K.H. Kao, C. Huyghebaert, G. Groeseneken, V.R. Rao, K.K. Bhuwalka, M.M. Heyns, N. Collaert, A.V.Y. Thean, Fabrication and analysis of a Si/Si0.55Ge0.45 heterojunction line tunnel FET. IEEE Trans. Electron. Devices. 61(3), 707–715 (2014). https://doi.org/10.1109/TED.2014.2299337
V. Brouzet, B. Salem, P. Periwal, R. Alcotte, F. Chouchane, F. Bassani, T. Baron, G. Ghibaudo, Fabrication and electrical characterization of homo-and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism. Solid. State. Electron. 118, 26–29 (2016). https://doi.org/10.1016/j.sse.2016.01.005
G. Dewey, B. Chu-Kung, J. Boardman, J.M. Fastenau, J. Kavalieros, R. Kotlyar, W.K. Liu, D. Lubyshev, M. Metz, N. Mukherjee, P. Oakey, R. Pillarisetty, M. Radosavljevic, H.W. Then, R. Chau, Fabrication, characterization, and physics of III-V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing. Technical Digest-Int. Electron. Devices. Meeting. IEDM. 3, 785–788 (2011). https://doi.org/10.1109/IEDM.2011.6131666
A.N. Hanna, H.M. Fahad, M.M. Hussain, InAs/Si Hetero-Junction Nanotube Tunnel Transistors. Sci. Rep. 5, 9843 (2015). https://doi.org/10.1038/srep09843
T. Vasen, P. Ramvall, A. Afzalian, G. Doornbos, M. Holland, C. Thelander, K.A. Dick, L.-E. Wernersson, M. Passlack, Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs. Sci. Rep. 9(1), 202 (2019). https://doi.org/10.1038/s41598-018-36549-z
P.-C. Shih, W.-C. Hou, J.-Y. Li, A U-Gate InGaAs/GaAsSb Heterojunction TFET of Tunneling Normal to the Gate With Separate Control Over ON- and OFF-State Current. IEEE Electron Device Lett. 38(12), 1751–1754 (2017). https://doi.org/10.1109/LED.2017.2759303
A. D. Es-Sakhi and M. H. Chowdhury, “Multichannel Tunneling Carbon Nanotube Field Effect Transistor (MT-CNTFET),” in 27th IEEE International System-on-Chip Conference (SOCC), pp. 156–159 (2014). https://doi.org/10.1109/SOCC.2014.6948918.
N.V. Karimi, Y. Pourasad, Tunneling Carbon Nanotube Field Effect Transistor with Asymmetric Graded Double Halo Doping in Channel: Asym-GDH-T-CNTFET. Procedia Mater. Sci. 11, 287–292 (2015). https://doi.org/10.1016/j.mspro.2015.11.064
F. Giannazzo, G. Greco, F. Roccaforte, S. Sonde, Vertical Transistors Based on 2D Materials: Status and Prospects. Crystals 8(2), 70 (2018). https://doi.org/10.3390/cryst8020070
Z. Yang, Tunnel Field-Effect Transistor With an L-Shaped Gate. IEEE Electron. Device. Lett. 37(7), 839–842 (2016). https://doi.org/10.1109/LED.2016.2574821
W. Wang, P. Wang, C. Zhang, X. Lin, X. Liu, Q.-Q. Sun, P. Zhou, D.W. Zhang, Design of U-Shape Channel Tunnel FETs With SiGe Source Regions. IEEE Trans. Electron Devices. 61(1), 193–197 (2014). https://doi.org/10.1109/TED.2013.2289075
S. Chen, S. Wang, H. Liu, W. Li, Q. Wang, X. Wang, Symmetric U-Shaped Gate Tunnel Field-Effect Transistor. IEEE Trans. Electron Devices. 64(3), 1343–1349 (2017). https://doi.org/10.1109/TED.2017.2647809
S.W. Kim, J.H. Kim, T.K. Liu, W.Y. Choi, B. Park, Demonstration of L-Shaped Tunnel Field-Effect Transistors. IEEE Trans. Electron Devices 63(4), 1774–1778 (2016). https://doi.org/10.1109/TED.2015.2472496
R.M. Imenabadi, M. Saremi, W.G. Vandenberghe, A Novel PNPN-Like Z-Shaped Tunnel Field- Effect Transistor with Improved Ambipolar Behavior and RF Performance. IEEE Trans. Electron Devices 64, 4752–4758 (2017)
M. Imenabadi, M. Saremi, A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications. J. Electronic Materials 47, 1091–1098 (2018)
G. Musalgaonkar, S. Sahay, R.S. Saxena, M.J. Kumar, Nanotube Tunneling FET With a Core Source for Ultrasteep Subthreshold Swing: A Simulation Study. IEEE Trans. Electron Devices 66(10), 4425–4432 (2019). https://doi.org/10.1109/TED.2019.2933756
J. Yoon, K. Kim, C. Baek, Core-shell homojunction silicon vertical nanowire tunneling field- effect transistors. Nat. Publ. Gr. 23(7), 1–9 (2017). https://doi.org/10.1038/srep41142
M.J.K. Gaurav Musalgaonkar, S. Sahay, R.S. Saxena, A Line Tunneling Field-Effect Transistor Based on Misaligned Core-Shell Gate Architecture in Emerging Nanotube FETs. IEEE Trans. Electron Devices 66(6), 1–9 (2019)
S. Agarwal, J.T. Teherani, J.L. Hoyt, D.A. Antoniadis, E. Yablonovitch, Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor. IEEE Trans. Electron Devices 61(5), 1599–1606 (2014). https://doi.org/10.1109/TED.2014.2312939
J.L. Padilla, C. Medina-Bailon, C. Alper, F. Gamiz, A.M. Ionescu, Confinement-induced InAs/GaSb heterojunction electron–hole bilayer tunneling field-effect transistor. Appl. Phys. Lett. 112(18), 182101 (2018). https://doi.org/10.1063/1.5012948
W.J. Jeong, T.K. Kim, J.M. Moon, M.G. Park, Germanium electron–hole bilayer tunnel fi eld-effect transistors with a symmetrically arranged double gate. Semicond. Sci. Technol. 30(3), 035021 (2015). https://doi.org/10.1088/0268-1242/30/3/035021
D. S. SOFTWARE, Device Simulator Atlas: Atlas User’s Manual. Silvaco, Inc (2016)
M. Levinshtein, S. Rumyantsev, M. Shur, Handbook Series on Semiconductor Parameters. World Scientific Publishing Co. Pte. Ltd (1996)
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Keighobadi, D., Mohammadi, S. & Mohtaram, M. Switching Performance Investigation of a Gate-All-Around Core-Source InGaAs/InP TFET. Trans. Electr. Electron. Mater. 22, 502–508 (2021). https://doi.org/10.1007/s42341-020-00257-1
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DOI: https://doi.org/10.1007/s42341-020-00257-1