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InSb/Si Heterojunction-Based Tunnelling Field-Effect Transistor with Enhanced Drive Current and Steep Switching

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Abstract

This work reports a simulation study of an InSb/Si heterojunction-based tunnelling field effect transistor (TFET) by employing drain doping engineering with an asymmetric gate structure to achieve high ON current and low subthreshold swing (SS). Incorporation of an n+ pocket towards the drain and InSb towards the source has improved the ION/IOFF ratio significantly. The ground plane in the proposed structure reduces the electric field towards the drain that increases the effective channel length for short-channel devices. A calibrated exhaustive TCAD study is deployed to analyse the device physics for the proposed structure. The values of the ION/IOFF ratio and average subthreshold swing (SSAvg) were found to be ~ 1012 and 29 mV/decade, respectively. Reduced average subthreshold swing and lower OFF current (IOFF) with suppressed ambipolar behaviour in the proposed TFET structure ensures its suitability for high-performance, ultralow-power applications.

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Acknowledgments

The authors are thankful to the Department of Electronics and Communication Engineering, National Institute of Technology Patna, India, for extending the Silvaco simulation facility to complete this work.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Ranchi, Jharkhand, 834010, India

    Sukanta Kumar Swain, Nishit Malviya & Shashi Kant Sharma

  2. Microelectronics & VLSI Design Lab, National Institute of Technology, Patna, Bihar, 800005, India

    Sangeeta Singh

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  1. Sukanta Kumar Swain
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  2. Nishit Malviya
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  3. Sangeeta Singh
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  4. Shashi Kant Sharma
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Correspondence to Shashi Kant Sharma.

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Swain, S.K., Malviya, N., Singh, S. et al. InSb/Si Heterojunction-Based Tunnelling Field-Effect Transistor with Enhanced Drive Current and Steep Switching. J. Electron. Mater. 51, 704–711 (2022). https://doi.org/10.1007/s11664-021-09325-5

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