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Optimized Design of SiInZnO/Ag/SiInZnO Transparent Conductive Electrode by Using Optical Admittance Simulation

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Abstract

Transparent amorphous semiconducting SiInZnO (SIZO) and metallic Ag multilayers have been fabricated at room temperature for the application of transparent conducting electrodes (TCEs). Theoretical simulation to estimate and fabricate TCEs with improved electrical property without sacrificing the transmittance of multilayer has been performed and compared with experiment results. Each layer thickness of SIZO/Ag/SIZO multilayer has been optimized based on optical simulation. The transmittance of multilayer showed the same tendency both simulation and experiment results. The reflectance of multilayer simulated by using optical admittance design is well agreed with transmittance results. The electrical properties were gradually enhanced as the Ag layer thickness increased as expected. The SIZO/Ag/SIZO multilayer was optimized at 11 nm-thick of Ag layer and 33 nm-thick of SIZO layer resulting in high figure of merit of 40.96 × 10−3 Ω−1. This optimized result indicates optical simulation could be used powerfully to fabricate TCEs with high electrical property without sacrificing the transmittance of multilayer.

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Authors and Affiliations

  1. Department of Semiconductor Engineering, Cheongju University, Cheongju, Chungbuk, 360-764, Republic of Korea

    Byoung Keun Kim & Sang Yeol Lee

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  1. Byoung Keun Kim
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  2. Sang Yeol Lee
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Correspondence to Sang Yeol Lee.

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Kim, B.K., Lee, S.Y. Optimized Design of SiInZnO/Ag/SiInZnO Transparent Conductive Electrode by Using Optical Admittance Simulation. Trans. Electr. Electron. Mater. 21, 324–328 (2020). https://doi.org/10.1007/s42341-020-00178-z

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