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The Electrical Characteristics of High Voltage Non Punch Through (NPT) and Field Stop IGBT for Nano Convergence Power Devices

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Abstract

Power devices was used all of industry, widely because of switching devices. Specially, those devices could be applicable automotive and energy IT. This paper was proposed a 1500 V class NPT IGBT, in which a planar type was layered on the N-type wafer and the P-type collector was layered on the lower side. It also designed a field stop IGBT, which design process was similar to that of NPT IGBT but requires N+ to be inserted before layering the collector to create a buffer and layering the P-type collector. The electrical characteristics were derived after the design, and threshold voltage and on-state voltage drop, as well as breakdown voltage of the two devices were compared and analyzed. As a respect of threshold voltage, We obtained 4.21 and 4.11 V, respectively. And the breakdown characteristic of power devices is one of the most important electrical characteristics. The value of that was achieved 1818 and 1811 V, respectively. At last, we obtained 4.10 and 4.01 V of on state voltage drop, respectively. The comparison results showed that the field stop IGBT device constantly maintained an electric field at the drift layer due to the N+ buffer layer, indicating a small on-resistance while maintaining the breakdown voltage in the NPT device. Thus, it is expected to play a significant role as a switching device for high voltage over 1700 V in the future.

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Acknowledgement

This paper was supported by Far East University Grant (FEU2017S06).

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Authors and Affiliations

  1. Department of Energy IT, Far East University, Eumseong, 27601, Korea

    Ey Goo Kang

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  1. Ey Goo Kang
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Correspondence to Ey Goo Kang.

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Kang, E.G. The Electrical Characteristics of High Voltage Non Punch Through (NPT) and Field Stop IGBT for Nano Convergence Power Devices. Trans. Electr. Electron. Mater. 19, 241–244 (2018). https://doi.org/10.1007/s42341-018-0048-2

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  • DOI: https://doi.org/10.1007/s42341-018-0048-2

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