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Research on high bandwidth power supply

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Abstract

Background

Fourth-generation photon sources like Free Electron Lasers (FEL) and Diffraction-Limited Storage Rings (DLSR) have high requirements for beam emittance. In the case of DLSR sources, a set of high-performance fast orbit feedback system (FOFB) is needed to correct the beam orbit quickly and accurately.

Purpose

FOFB system has four key components, which is BPM, orbit feedback calculation, fast correction magnet and fast corrector power supply. The FOFB gives the correction command and controls the fast corrector power supply to drive the fast correction magnet to correct the beam quickly and accurately. The corrector power supply has an important impact on the performance of FOFB. The corrector power supply needs to have high bandwidth and low output current ripple.

Methods

The new GaN power device is used to solve the restriction of the high-speed switching. The switching frequency of the power supply is increased to 300 kHz. The control system is designed to improve the bandwidth and optimize the output current ripple. The modeling analysis of the key parts of the system is given and the simulation experiments are carried out with MATLAB.

Results and conclusion

The test results showed that bandwidth of the designed power supply is 20 kHz. The step response time is 18us and output current ripple is lower than 1 mA.

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References

  1. S. Lei, S. Fenglei et al., Overview of special power supplies for advanced synchrotron radiation source. High Power Laser Particle Beams 31(4), 12–17 (2019)

    Google Scholar 

  2. J. Xiaoming, W. Jiuqing, Q. Qing et al., Chinese high energy photon source and the test facility. Sci Sin Phys. Mech. Astron. 44(10), 1075–1094 (2014). ((in Chinese))

    Article  Google Scholar 

  3. X.I.A.N. Dingchang, Present Status and Development of Synchrotron Radiation. Bull. Natl. Nat. Sci. Found. China 6, 321–325 (2005)

    Google Scholar 

  4. P. Liu, Research on fast corrector magnet power supply for HEPS (University of Chinese Academy of Sciences, Beijing, China, 2020)

    Google Scholar 

  5. Xu. Peng Liu, F.L. Wang, Fast corrector power supply design for HEPS [J]. Radiat. Detect. Technol. Methods 4(1), 56–62 (2019)

    Google Scholar 

  6. B.-S. Wang, K.-B. Liu et al., Digital Controller Implementation of a Corrector Power Converter for TPS Fast Corrector Magnet. Inform. Electron. Eng. 7(4), 127–131 (2017)

    Google Scholar 

  7. R. Garcia-Gil, J.M. Espi, F. Voelker, E.J. Dede, J. Castello, “A novel four-quadrant power supply for low-energy correction magnets.” Nucl Instrum. Meth. A. 510, 357–361 (2003)

    Article  ADS  Google Scholar 

  8. JiaLin Xie, Design and research of driving circuit for silicon carbide MOSFET and silicon IGBT (University of Electronic Science and Technology of China, Chengdu, China, 2020)

    Google Scholar 

  9. IMAIZUMI M,HASEGAWA S,SUMITANI H,et al.Remarkable advances in SiC power device technology for ultra high power systems. In: Proceedings of IEEE international electron devices meeting. Washington, DC , USA, 651–654, (2013)

  10. OSTLING M,GHANDI R, ZETTERLING C M. SiC power devices—present status,applications and future perspective. In: Proceedings of the 23rd international symposium on power semiconductor devices and ICs. San Diego, CA, USA. 11–15, (2011)

  11. FU L X,ZHANG X,SCOTT M,et al. The evaluation and application of wide bandgap power devices. In: Proceedings of the conference and expo transportation electrification Asia-Pacific. Beijing, China. 1–5, (2014)

  12. AGARWAL A K. An overview of SiC power devices. In: Proceedings of the intonational conference on power,control and embedded systems. Allahabad,India. 5698670–1–5698670–4, (2010)

  13. Yu. Wang, Hu. Ma Wei, Weibo, et al., Realization of high frequency driver circuit and high efficiency GaN HEMT power supply module. Appl. Electron. Tech. 47(7), 38–43 (2021)

    Google Scholar 

  14. Shealy J, Smart J, Poulton M, et al. Gallium nitride (GaN) HEMT’s: progress and potential for commercial applications. Gallium arsenide integrated circuit (GaAs IC) symposium. 243–246, (2002)

  15. Xiao Lu, Reseach on wide band gap semiconductor high efficiency power amplifier. Chengdu, China: University of electronic science and technology of China, (2014)

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Correspondence to P. Liu.

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Liu, P., Long, F.L. & Li, Y. Research on high bandwidth power supply. Radiat Detect Technol Methods 6, 409–417 (2022). https://doi.org/10.1007/s41605-022-00337-1

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  • DOI: https://doi.org/10.1007/s41605-022-00337-1

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