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Improved multilevel storage capacity in Ge2Sb2Te5-based phase-change memory using a high-aspect-ratio lateral structure

通过高长宽比横向结构的设计提升基于Ge2Sb2Te5 材 料的相变存储器的多值存储能力

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Abstract

Further improvement of storage density is a key challenge for the application of phase-change memory (PCM) in storage-class memory. However, for PCM, storage density improvements include feature size scaling down and multi-level cell (MLC) operation, potentially causing thermal crosstalk issues and phase separation issues, respectively. To address these challenges, we propose a high-aspect-ratio (25:1) lateral nanowire (NW) PCM device with conventional chalcogenide Ge2Sb2Te5 (GST-225) to realize stable MLC operations, i.e., low intra- and inter-cell variability and low resistance drift (coefficient = 0.009). The improved MLC performance is attributed to the high aspect ratio, which enables precise control of the amorphous region because of sidewall confinement, as confirmed by transmission electron microscopy analysis. In summary, the NW devices provide guidance for the design of future high-aspect-ratio three-dimensional PCM devices with MLC capability.

摘要

如何进一步提高存储密度是相变存储(PCM)应用于存储级内存 (SCM)的关键挑战. 然而, 相变存储器主要通过尺寸微缩和多值操作来 提高存储密度, 往往面临严重的热串扰和相分离问题. 为此, 我们提出 了一种高长宽比(25:1)的横向纳米线器件, 该器件采用传统的硫系化合 物Ge2Sb2Te5 就可以实现稳定的多值操作, 并且器件具有较好的一致性 以及较低的电阻漂移系数(0.009), 其优异的多值性能主要是由于在设 计的高长宽比结构中, 绝缘层侧壁的限制使得相变材料的非晶区域可 以精确控制, 这也被透射电子显微镜分析证实. 本文设计的纳米线器件 为提升高深宽比三维相变存储器的多值存储能力提供了重要指导.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (62174065), the Key Research and Development Plan of Hubei Province (2020BAB007), and Hubei Provincial Natural Science Foundation (2021CFA038). The authors acknowledge the support from Hubei Key Laboratory of Advanced Memories & Hubei Engineering Research Center on Microelectronics.

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Authors and Affiliations

  1. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China

    Ruizhe Zhao  (赵锐哲), Mingze He  (何明泽), Lun Wang  (王伦), Ziqi Chen  (陈子琪), Xiaomin Cheng  (程晓敏), Hao Tong  (童浩) & Xiangshui Miao  (缪向水)

  2. Hubei Yangtze Memory Laboratories, Wuhan, 430205, China

    Xiaomin Cheng  (程晓敏), Hao Tong  (童浩) & Xiangshui Miao  (缪向水)

Authors
  1. Ruizhe Zhao  (赵锐哲)
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  2. Mingze He  (何明泽)
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  3. Lun Wang  (王伦)
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  4. Ziqi Chen  (陈子琪)
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  5. Xiaomin Cheng  (程晓敏)
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  6. Hao Tong  (童浩)
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  7. Xiangshui Miao  (缪向水)
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Contributions

Zhao R and Tong H conceived the idea and designed the experiments. Zhao R and He M performed the experiments and electrical measurements. Chen Z contributed to the simulation. Zhao R and Wang L performed the characterization. Zhao R wrote this manuscript. Wang L draw the graphics. Tong H, Cheng X, and Miao X were in charge and advised on all parts of the project. All authors contributed to the general discussion and revision of the manuscript.

Corresponding author

Correspondence to Hao Tong  (童浩).

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Conflict of interest

The authors declare that they have no conflict of interest.

Supplementary information

Supporting data are available in the online version of the paper.

Ruizhe Zhao is currently a PhD candidate at the Institute of Information Storage Materials and Devices, Huazhong University of Science and Technology. Her main research focuses on the improvement of operation speed and storage density of phase change memory based on chalcogenide phase change material Ge2Sb2Te5.

Hao Tong is now a professor at the School of Optical and Electronic Information, Huazhong University of Science and Technology. He obtained his PhD degree from Huazhong University of Science and Technology in 2012. His research interests include phase change materials, ovonic threshold switching selector, and 3D phase change memory.

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Zhao, R., He, M., Wang, L. et al. Improved multilevel storage capacity in Ge2Sb2Te5-based phase-change memory using a high-aspect-ratio lateral structure. Sci. China Mater. 65, 2818–2825 (2022). https://doi.org/10.1007/s40843-022-2028-7

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  • DOI: https://doi.org/10.1007/s40843-022-2028-7

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