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Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications

基于结晶材料的柔性忆阻器的研究进展

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Abstract

Memristors have recently emerged as promising contenders for in-memory computing and artificial neural networks, attributed to their analogies to biological synapses and neurons in structural and electrical behaviors. From the diversity level, a variety of materials have been demonstrated to have great potential for memristor applications. Herein, we focus on one class of crystalline materials (CMs)-based flexible memristors with state-of-the-art experimental demonstrations. Firstly, the typical device structure and switching mechanisms are introduced. Secondly, the recent advances on CMs-based flexible memristors, including 2D materials, metal-organic frameworks, covalent organic frameworks, and perovskites, as well as their applications for data storage and neuromorphic devices are comprehensively summarized. Finally, the future challenges and perspectives of CMs-based flexible memristors are presented.

摘要

忆阻器因其结构独特以及电学行为能够模拟生物突触, 近年来在存算一体化和人工神经网络领域显现出广阔的应用前景. 从材料多样性的角度而言, 目前已有诸多材料显示出应用于忆阻器的巨大潜力. 在本文中, 我们关注一类基于结晶材料的柔性忆阻器. 首先介绍了典型的忆阻器件结构与开关机制, 其次重点综述了基于结晶材料的柔性忆阻器及其在数据存储和神经形态计算领域的应用, 包括二维材料、 金属有机框架材料、 共价有机框架材料和钙钛矿材料. 最后, 对当前基于结晶材料的柔性忆阻器的发展前景进行了展望.

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Acknowledgements

Zhang Q acknowledges the support from the starting funding of City University of Hong Kong (9380117) and the 111 Project (D20015). Li Y thanks the financial support from the National Natural Science Foundation of China (22008164), the Natural Science Foundation of Jiangsu Province (BK20190939), and the Natural Science Foundation of Jiangsu Higher Education Institutions of China (19KJB150018). This work was also supported by the Natural Science Foundation of Jiangsu Higher Education Institutions (18KJA470004), the Six Talent Peaks Project of Jiangsu Province, China (XCL-078), and Suzhou Key Laboratory for Low Dimensional Optoelectronic Materials and Devices (SZS201611).

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  1. These authors contributed equally to this work.

Authors and Affiliations

  1. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China

    Yang Li  (李阳), Cheng Zhang  (张程), Zhiming Shi  (施智明), Chunlan Ma  (马春兰) & Jun Wang  (王军)

  2. Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China

    Qichun Zhang  (张其春)

  3. Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, 999077, China

    Qichun Zhang  (张其春)

Authors
  1. Yang Li  (李阳)
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  2. Cheng Zhang  (张程)
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  3. Zhiming Shi  (施智明)
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  4. Chunlan Ma  (马春兰)
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  5. Jun Wang  (王军)
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  6. Qichun Zhang  (张其春)
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Contributions

Author contributions Li Y and Zhang C wrote and revised the manuscript with support from Ma C and Zhang Q; Shi Z and Wang J polished the manuscript and organized the references. All authors contributed to the general discussion.

Corresponding authors

Correspondence to Yang Li  (李阳), Chunlan Ma  (马春兰) or Qichun Zhang  (张其春).

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Conflict of interest The authors declare that they have no conflict of interest.

Additional information

Yang Li is currently an associate professor at the School of Physical Science and Technology, Suzhou University of Science and Technology. He received his BS and PhD degrees from Soochow University. From 2016 to 2017, he studied at Prof. Qichun Zhang’s group as a joint PhD student. His research interests focus on the preparation of novel memristive materials and devices, and their applications for data storage and neuromorphic computing.

Cheng Zhang is currently a research fellow at the School of Physical Science and Technology, Suzhou University of Science and Technology. From 2019 to 2020, he studied at Prof. Qichun Zhang’s group as a joint PhD student. His research interests involve the synthesis and application of organic semiconductor materials, particularly, organic resistive memory devices.

Chunlan Ma is a professor and the dean of the School of Physical Science and Technology, Suzhou University of Science and Technology. Her research interests include electronic structure, band structure investigation and the design of novel optoelectronic materials and devices using first-principles calculations.

Qichun Zhang is a professor at the Department of Materials Science and Engineering, City University of Hong Kong. Before he moved to Hong Kong, he was an associate professor with tenure at the School of Materials Science and Engineering, Nanyang Technological University of Singapore. He is currently a fellow of the Royal Society of Chemistry. His research interests include carbon-rich conjugated materials and their applications for optoelectronic and semiconductor devices.

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Li, Y., Zhang, C., Shi, Z. et al. Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications. Sci. China Mater. 65, 2110–2127 (2022). https://doi.org/10.1007/s40843-021-1771-5

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  • DOI: https://doi.org/10.1007/s40843-021-1771-5

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