Skip to main content
SpringerLink
Log in

Band structure engineered tunneling heterostructures for high-performance visible and near-infrared photodetection

带结构工程隧穿异质结用于高性能可见和近红外光探测

  • Articles
  • Published:
Science China Materials Aims and scope Submit manuscript

Abstract

Tunneling heterostructures are emerging as a versatile architecture for photodetection due to their advanced optical sensitivity, tailorable detection band, and well-balanced photoelectric performances. However, the existing tunneling heterostructures are mainly operated in the visible wavelengths and have been rarely investigated for the near-infrared detection. Herein, we report the design and realization of a novel broken-gap tunneling heterostructure by combining WSe2 and Bi2Se3, which is able to realize the simultaneous visible and near-infrared detection because of the complementary bandgaps of WSe2 and Bi2Se3 (1.46 and 0.3 eV, respectively). Thanks to the realigned band structure, the heterostructure shows an ultralow dark current below picoampere and a high tunneling-dominated photocurrent. The photodetector based on our tunneling heterostructure exhibits a superior specific detectivity of 7.9×1012 Jones for a visible incident of 532 nm and 2.2×1010 Jones for a 1456 nm near-infrared illumination. Our study demonstrates a new band structure engineering avenue for the construction of van der Waals tunneling heterostructures for high-performance wide band photodetection.

摘要

隧穿异质结因其先进的光学灵敏度、可定制的探测范围以及均衡的光电性能而正逐渐成为一种光电探测的通用体系结构. 但是, 现有的隧穿异质结主要在可见光波段工作, 很少能实现近红外光探测. 本文利用具有互补带隙的WSe2和Bi2Se3(1.46和0.3 eV)设计了一种能同时实现高性能可见和近红外光探测的新型裂隙隧穿异质结. 由于能带结构的重新排列, WSe2/Bi2Se3异质结构展现出了低于pA量级的暗电流和以隧穿为主的光电流. 我们设计的隧穿异质结对532 nm可见光和1456 nm近红外光的比探测度高达7.9×1012和2.2×1010 Jones. 本研究为构建用于高性能宽带光探测的范德瓦尔斯隧穿异质结构提供了一种新的带结构工程途径.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Geim AK, Grigorieva IV. van der Waals heterostructures. Nature, 2013, 499: 419–425

    CAS  Google Scholar 

  2. Liu Y, Weiss NO, Duan X, et al. Van der Waals heterostructures and devices. Nat Rev Mater, 2016, 1: 16042

    CAS  Google Scholar 

  3. Koppens FHL, Mueller T, Avouris P, et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat Nanotech, 2014, 9: 780–793

    CAS  Google Scholar 

  4. Novoselov KS, Mishchenko A, Carvalho A, et al. 2D materials and van der Waals heterostructures. Science, 2016, 353: aac9439

    CAS  Google Scholar 

  5. Xia F, Wang H, Xiao D, et al. Two-dimensional material nanophotonics. Nat Photon, 2014, 8: 899–907

    CAS  Google Scholar 

  6. Lee CH, Lee GH, van der Zande AM, et al. Atomically thin p-n junctions with van der Waals heterointerfaces. Nat Nanotech, 2014, 9: 676–681

    CAS  Google Scholar 

  7. Wang F, Wang Z, Xu K, et al. Tunable GaTe-MoS2 van der Waals p-n junctions with novel optoelectronic performance. Nano Lett, 2015, 15: 7558–7566

    CAS  Google Scholar 

  8. Wang T, Andrews K, Bowman A, et al. High-performance WSe2 phototransistors with 2D/2D ohmic contacts. Nano Lett, 2018, 18: 2766–2771

    CAS  Google Scholar 

  9. Li L, Han W, Pi L, et al. Emerging in-plane anisotropic two-dimensional materials. InfoMat, 2019, 1: 54–73

    Google Scholar 

  10. Xie C, Mak C, Tao X, et al. Photodetectors based on two-dimensional layered materials beyond graphene. Adv Funct Mater, 2017, 27: 1603886

    Google Scholar 

  11. Long M, Wang Y, Wang P, et al. Palladium diselenide long-wavelength infrared photodetector with high sensitivity and stability. ACS Nano, 2019, 13: acsnano.8b09476

  12. Wang Y, Liu E, Gao A, et al. Negative photoconductance in van der Waals heterostructure-based floating gate phototransistor. ACS Nano, 2018, 12: 9513–9520

    CAS  Google Scholar 

  13. Wang RY, Zhou FY, Lv L, et al. Modulation of the anisotropic electronic properties in ReS2via ferroelectronic film. CCS Chem, 2019, 1: 268–277

    CAS  Google Scholar 

  14. Zhou X, Zhou N, Li C, et al. Vertical heterostructures based on SnSe2/MoS2 for high performance photodetectors. 2D Mater, 2017, 4: 025048

    Google Scholar 

  15. Ye L, Li H, Chen Z, et al. Near-infrared photodetector based on MoS2/black phosphorus heterojunction. ACS Photonics, 2016, 3: 692–699

    CAS  Google Scholar 

  16. Wen Y, Yin L, He P, et al. Integrated high-performance infrared phototransistor arrays composed of nonlayered PbS-MoS2 heterostructures with edge contacts. Nano Lett, 2016, 16: 6437–6444

    CAS  Google Scholar 

  17. Cao R, Wang HD, Guo ZN, et al. Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity. Adv Opt Mater, 2019, 7: 1900020

    Google Scholar 

  18. Chu D, Lee YH, Kim EK. Selective control of electron and hole tunneling in 2D assembly. Sci Adv, 2017, 3: e1602726

    Google Scholar 

  19. Vu QA, Lee JH, Nguyen VL, et al. Tuning carrier tunneling in van der Waals heterostructures for ultrahigh detectivity. Nano Lett, 2017, 17: 453–459

    CAS  Google Scholar 

  20. Zhou X, Hu X, Zhou S, et al. Tunneling diode based on WSe2/SnS2 heterostructure incorporating high detectivity and responsivity. Adv Mater, 2018, 30: 1703286

    Google Scholar 

  21. Liu X, Qu D, Li HM, et al. Modulation of quantum tunneling via a vertical two-dimensional black phosphorus and molybdenum disulfide p-n junction. ACS Nano, 2017, 11: 9143–9150

    CAS  Google Scholar 

  22. Wu F, Xia H, Sun H, et al. AsP/InSe van der Waals tunneling heterojunctions with ultrahigh reverse rectification ratio and high photosensitivity. Adv Funct Mater, 2019, 29: 1900314

    Google Scholar 

  23. Li H, Cao J, Zheng W, et al. Controlled synthesis of topological insulator nanoplate arrays on mica. J Am Chem Soc, 2012, 134: 6132–6135

    CAS  Google Scholar 

  24. Zheng W, Xie T, Zhou Y, et al. Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors. Nat Commun, 2015, 6: 6972

    CAS  Google Scholar 

  25. Wang F, Li L, Huang W, et al. Submillimeter 2D Bi2Se3 flakes toward high-performance infrared photodetection at optical communication wavelength. Adv Funct Mater, 2018, 28: 1802707

    Google Scholar 

  26. Chuang CHM, Brown PR, Bulović V, et al. Improved performance and stability in quantum dot solar cells through band alignment engineering. Nat Mater, 2014, 13: 796–801

    CAS  Google Scholar 

  27. Wu H, Kang Z, Zhang Z, et al. Interfacial charge behavior modulation in perovskite quantum dot-monolayer MoS2 0D–2D mixed-dimensional van der Waals heterostructures. Adv Funct Mater, 2018, 28: 1802015

    Google Scholar 

  28. Zhang H, Liu CX, Qi XL, et al. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface. Nat Phys, 2009, 5: 438–442

    CAS  Google Scholar 

  29. Bianchi M, Guan D, Bao S, et al. Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3. Nat Commun, 2010, 1: 128

    Google Scholar 

  30. Peng H, Dang W, Cao J, et al. Topological insulator nanostructures for near-infrared transparent flexible electrodes. Nat Chem, 2012, 4: 281–286

    CAS  Google Scholar 

  31. Furchi MM, Pospischil A, Libisch F, et al. Photovoltaic effect in an electrically tunable van der Waals heterojunction. Nano Lett, 2014, 14: 4785–4791

    CAS  Google Scholar 

  32. Ji J, Choi JH. Layer-number-dependent electronic and optoelectronic properties of 2D WSe2-organic hybrid heterojunction. Adv Mater Interfaces, 2019, 6: 1900637

    Google Scholar 

  33. Doan MH, Jin Y, Adhikari S, et al. Charge Transport in MoS2/WSe2 van der Waals heterostructure with tunable inversion layer. ACS Nano, 2017, 11: 3832–3840

    CAS  Google Scholar 

  34. Lee I, Rathi S, Lim D, et al. Gate-tunable hole and electron carrier transport in atomically thin dual-channel WSe2/MoS2 heterostructure for ambipolar field-effect transistors. Adv Mater, 2016, 28: 9519–9525

    CAS  Google Scholar 

  35. Cheng R, Li D, Zhou H, et al. Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes. Nano Lett, 2014, 14: 5590–5597

    CAS  Google Scholar 

  36. Yang T, Zheng B, Wang Z, et al. Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions. Nat Commun, 2017, 8: 1906

    Google Scholar 

  37. Ramasubramaniam A. Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides. Phys Rev B, 2012, 86: 115409

    Google Scholar 

  38. Yu Y, Hu S, Su L, et al. Equally efficient interlayer exciton relaxation and improved absorption in epitaxial and nonepitaxial MoS2/WS2 heterostructures. Nano Lett, 2015, 15: 486–491

    CAS  Google Scholar 

  39. Chiu MH, Zhang C, Shiu HW, et al. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction. Nat Commun, 2015, 6: 7666

    CAS  Google Scholar 

  40. Wu H, Si H, Zhang Z, et al. All-inorganic perovskite quantum dotmonolayer MoS2 mixed-dimensional van der Waals heterostructure for ultrasensitive photodetector. Adv Sci, 2018, 5: 1801219

    Google Scholar 

  41. Huang Y, Zhuge F, Hou J, et al. Van der Waals coupled organic molecules with monolayer MoS2 for fast response photodetectors with gate-tunable responsivity. ACS Nano, 2018, 12: 4062–4073

    CAS  Google Scholar 

  42. Nourbakhsh A, Zubair A, Dresselhaus MS, et al. Transport properties of a MoS2/WSe2 heterojunction transistor and its potential for application. Nano Lett, 2016, 16: 1359–1366

    CAS  Google Scholar 

  43. Srivastava PK, Hassan Y, Gebredingle Y, et al. Multifunctional van der Waals broken-gap heterojunction. Small, 2019, 15: 1804885

    Google Scholar 

  44. Das S, Prakash A, Salazar R, et al. Toward low-power electronics: tunneling phenomena in transition metal dichalcogenides. ACS Nano, 2014, 8: 1681–1689

    CAS  Google Scholar 

  45. Fan S, Vu QA, Lee S, et al. Tunable negative differential resistance in van der Waals heterostructures at room temperature by tailoring the interface. ACS Nano, 2019, 13: 8193–8201

    CAS  Google Scholar 

  46. Fan S, Yun SJ, Yu WJ, et al. Tailoring quantum tunneling in a vanadium-doped WSe2/SnSe2 heterostructure. Adv Sci, 2020, 7: 1902751

    CAS  Google Scholar 

  47. Guo Z, Chen Y, Zhang H, et al. Independent band modulation in 2D van der Waals heterostructures via a novel device architecture. Adv Sci, 2018, 5: 1800237

    Google Scholar 

  48. Wang X, Wang P, Wang J, et al. Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics. Adv Mater, 2015, 27: 6575–6581

    CAS  Google Scholar 

  49. Long M, Gao A, Wang P, et al. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Sci Adv, 2017, 3: e1700589

    Google Scholar 

  50. Liu H, Li D, Ma C, et al. Van der Waals epitaxial growth of vertically stacked Sb2Te3/MoS2 p-n heterojunctions for high performance optoelectronics. Nano Energy, 2019, 59: 66–74

    CAS  Google Scholar 

  51. Yao J, Zheng Z, Yang G. Layered-material WS2/topological insulator Bi2Te3 heterostructure photodetector with ultrahigh responsivity in the range from 370 to 1550 nm. J Mater Chem C, 2016, 4: 7831–7840

    CAS  Google Scholar 

  52. Liu H, Zhu X, Sun X, et al. Self-powered broad-band photodetectors based on vertically stacked WSe2/Bi2Te3 p-n heterojunctions. ACS Nano, 2019, 13: 13573–13580

    CAS  Google Scholar 

Download references

Acknowledgements

This work was supported by the National Nature Science Foundation of China (21825103 and 51727809), Hubei Provincial Natural Science Foundation of China (2019CFA002) and the Fundamental Research Funds for the Central Universities (2019kfyXMBZ018). The authors thank the Analytical and Testing Centre of Huazhong University of Science and Technology.

Author information

Authors and Affiliations

  1. State Key Laboratory of Material Processing and Die & Mould Technology, School of Material Sciences and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China

    Fakun Wang  (王发坤), Peng Luo  (罗鹏), Yue Zhang  (张悦), Yu Huang  (黄玉), Qingfu Zhang  (张庆福), Yuan Li  (李渊) & Tianyou Zhai  (翟天佑)

Authors
  1. Fakun Wang  (王发坤)
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Peng Luo  (罗鹏)
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Yue Zhang  (张悦)
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Yu Huang  (黄玉)
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Qingfu Zhang  (张庆福)
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Yuan Li  (李渊)
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Tianyou Zhai  (翟天佑)
    View author publications

    You can also search for this author in PubMed Google Scholar

Contributions

Wang F and Huang Y fabricated the devices. Zhang Y and Zhang Q did the AFM and Raman measurements, respectively. Wang F performed the characterization and wrote the manuscript. Zhai T supervised the project. Wang F, Luo P, Yuan L and Zhai T discussed the manuscript and made the revision.

Corresponding author

Correspondence to Tianyou Zhai  (翟天佑).

Additional information

Conflict of interest

The authors declare that they have no conflict of interest.

Fakun Wang received his BSc degree in mineral processing engineering from Central South University in 2016. He is studying for his PhD degree at Huazhong University and Technology under the supervision of professor Tianyou Zhai. His work focuses on the controllable synthesis of low-dimensional inorganic materials, and their promising applications in optoelectronics.

Tianyou Zhai received his BSc degree in chemistry from Zhengzhou University in 2003, and PhD degree in physical chemistry from the Institute of Chemistry, Chinese Academy of Sciences (ICCAS) under the supervision of Prof. Jiannian Yao in 2008. Afterwards he joined the National Institute for Materials Science (NIMS, Japan) as a postdoctoral fellow of Japan Society for the Promotion of Science (JSPS) in Prof. Yoshio Bando’s group and then as a researcher of the International Center for Young Scientists (ICYS) within NIMS. Currently, he is a chief professor of the School of Materials Science and Engineering, Huazhong University of Science and Technology. His research interests include the controlled synthesis and exploration of fundamental physical properties of inorganic functional nanomaterials, as well as their promising applications in energy science, electronics and optoelectronics.

Supplementary Information for

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Wang, F., Luo, P., Zhang, Y. et al. Band structure engineered tunneling heterostructures for high-performance visible and near-infrared photodetection. Sci. China Mater. 63, 1537–1547 (2020). https://doi.org/10.1007/s40843-020-1353-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s40843-020-1353-3

Keywords

Search

Navigation