Abstract
Lead-free double perovskite, Cs2AgBiBr6, with higher stability and lower toxicity than those of its lead counterparts, has been considered a promising alternative for next-generation photovoltaic materials. For practical applications, a facile deposition method that could be used to fabricate high-quality double perovskite films with large grain size is highly desired. However, such kind of facile method has never been established for Cs2AgBiBr6. Herein, high-quality Cs2AgBiBr6 thin films with an average grain size of approximately 0.5 μm were successfully deposited via a simple one-step spin-coating method by using dimethyl sulfoxide (DMSO)-N,N-dimethylformamide (DMF) mixture with optimized volume ratio as the solvent and chlorobenzene (CB) as the antisolvent. On the basis of satisfactory quality of the film, efficient (>1%) Cs2AgBiBr6 perovskite solar cells were constructed. Furthermore, the photo-generated charge-carrier transfer from Cs2AgBiBr6 to the adjacent carrier extraction layers was systematically investigated via femtosecond transient spectroscopies. This study offers a new pathway to acquiring high-quality Cs2AgBiBr6 thin films and provides a useful guide toward the development of high-efficiency double perovskite solar cells in the future.
摘要
无铅双钙钛矿Cs2AgBiBr6与铅基钙钛矿相比具有更高的稳定性和更低的毒性, 被认为是很有前途的下一代光伏材料. 在实际应用中, 人们迫切需要一种简便的沉积方法来制备高质量、大晶粒尺寸的双钙钛矿薄膜. 然而, 目前尚未找到制备Cs2AgBiBr6薄膜的简便方法. 本文通过简单的一步旋涂法成功制备了晶粒尺寸达 0.5 μm的高质量Cs2AgBiBr6薄膜, 该方法使用体积比优化后的二甲基亚砜-二甲基甲酰胺(DMSO-DMF)混合溶液作为溶剂, 氯苯作为反溶剂. 基于良好的薄膜质量, 制备了高效(>1%) Cs2AgBiBr6钙钛矿太阳能电池. 此外, 利用飞秒瞬态光谱系统地研究了Cs2AgBiBr6与相邻的载流子传输层之间的光生电荷转移. 本工作为制备高质量的Cs2AgBiBr6薄膜开辟了新方法, 为高效双钙钛矿太阳能电池的发展提供了有益指导.
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Acknowledgements
The authors acknowledge financial support from Macau Science and Technology Development Fund (FDCT-116/2016/ A3, FDCT-091/2017/A2 and FDCT-014/2017/AMJ), the Research Grants (SRG2016–00087-FST, MYRG2018–00148-IAPME) from University of Macau, the National Natural Science Foundation of China (91733302, 61605073, 61935017), and the Natural Science Foundation of Guangdong Province, China (2019A1515012186).
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Zhao D and Xing G conceived the idea. Zhao D conducted the experiments. All authors contributed to the date analysis and co-drafted the manuscript. Xing G led the project.
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The authors declare that they have no conflict of interest.
Dandan Zhao graduated from Henan University with master degree, focusing on the solution-processed copper indium gallium selenide (CuInxGa(1-x)Se2) thin film solar cells. She is currently a PhD candidate in the Institute of Applied Physics and Materials Engineering (IAPME) at University of Macau under the supervision of Professor Guichuan Xing, and has interests in using the lead-free perovskite materials to fabricate stable solar cells.
Bingzhe Wang received his master degree in material engineering in 2014 from Qingdao University of Science and Technology, where he received his BSc degree. In 2019, he received his PhD degree in physical chemistry from the Friedrich-Alexander University of Erlangen-Nuremberg. He is currently a postdoctoral researcher in the IAPME, University of Macau. His research interest focus on ultrafast carrier dynamics in solar energy conversion.
Chao Liang graduated with a BSc degree from Henan University of Technology (2014) as well as a MSc degree in materials science from Zhengzhou University (2017). He is currently a PhD candidate in the IAPME at University of Macau under the supervision of Professor Gui-chuan Xing. His research areas focus on per-ovskite solar cells and quantum dot solar cells.
Guichuan Xing obtained his BSc degree in light sources and illuminating engineering from Fu-dan Univesity in 2003 and PhD in physics from the National University of Singapore in 2011. He joined the IAPME, University of Macau as an assistant professor in 2016. His current research interests include nonlinear optical properties and ultrafast carrier dynamics in novel optoelectronic materials and devices.
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Zhao, D., Wang, B., Liang, C. et al. Facile deposition of high-quality Cs2AgBiBr6 films for efficient double perovskite solar cells. Sci. China Mater. 63, 1518–1525 (2020). https://doi.org/10.1007/s40843-020-1346-0
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DOI: https://doi.org/10.1007/s40843-020-1346-0