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Iron-doping induced multiferroic in two-dimensional In2Se3

铁掺杂诱导二维硒化铟的多铁性

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Abstract

Multiferroic materials exhibit tremendous potentials in novel magnetoelectric devices such as high-density non-volatile storage. Herein, we report the coexistence of ferroelectricity and ferromagnetism in two-dimensional Fe-doped In2Se3 (Fe0.16In1.84Se3, FIS). The Fe atoms were doped at the In atom sites and the Fe content is ~3.22% according to the experiments. Our first-principles calculation based on the density-functional theory predicts a magnetic moment of 5 µB per Fe atom when Fe substitutes In sites in In2Se3. The theoretical prediction was further confirmed experimentally by magnetic measurement. The results indicate that pure In2Se3 is diamagnetic, whereas FIS exhibits ferromagnetic behavior with a parallel anisotropy at 2 K and a Curie temperature of ∼8 K. Furthermore, the sample maintains stable room-temperature ferroelectricity in piezoresponse force microscopy (PFM) measurement after the introduction of Fe atom into the ferroelectric In2Se3 nanoflakes. The findings indicate that the layered Fe0.16In1.84Se3 materials have potential in future nanoelectronic, magnetic, and optoelectronic applications.

摘要

多铁材料具有巨大的潜力, 可应用于新型磁电设备, 如高密度非易失性存储等. 在本工作中, 我们报道了一种具有铁电性和铁磁性共存特性的新型二维铁掺杂硒化铟. 实验结果显示, Fe原子在In原子位点进行了替位掺杂, Fe的含量约为3.22%, 其化学式为Fe0.16In1.84Se3. 基于密度泛函理论第一性原理计算预测, 当Fe替代硒化铟中In的位置时, 每个Fe原子的磁矩为5 µB. 我们通过量子干涉超导测试进一步证实了理论预测. 磁性测量表明纯硒化铟是抗磁性的, 而Fe0.16In1.84Se3表现出铁磁行为, 在2 K时具有平行各向异性, 居里温度约为8 K. 此外, 压电力响应测试表明Fe原子掺杂进入铁电硒化铟纳米薄片后仍保持稳定的室温铁电性. 研究结果表明, 层状多铁材料Fe0.16In1.84Se3在未来的纳米电子、 磁性和光电器件中具有潜在的应用前景.

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Acknowledgements

This work was financially supported by the National Key Research and Development Program of China (2017YFA0207500), the National Natural Science Foundation of China (61622406, 61571415 and 51502283), the Strategic Priority Research Program of Chinese Academy of Sciences (XDB30000000), and Beijing Academy of Quantum Information Sciences (Y18G04).

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Authors and Affiliations

  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China

    Huai Yang  (杨淮), Longfei Pan  (潘龙飞), Mengqi Xiao  (肖梦琪), Jingzhi Fang  (房景治), Yu Cui  (崔宇) & Zhongming Wei  (魏钟鸣)

  2. Beijing Academy of Quantum Information Sciences, Beijing, 100193, China

    Zhongming Wei  (魏钟鸣)

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  1. Huai Yang  (杨淮)
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  2. Longfei Pan  (潘龙飞)
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  3. Mengqi Xiao  (肖梦琪)
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  4. Jingzhi Fang  (房景治)
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  5. Yu Cui  (崔宇)
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  6. Zhongming Wei  (魏钟鸣)
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Contributions

Yang H and Wei Z conceived the study. Yang H conducted most experiments and wrote the manuscript with support from Wei Z. Pan L performed the DFT calculations and wrote the theory part. Xiao M, Fang J and Cui Y provided experimental assistance and theoretical discussion. All authors contributed to the general discussion.

Corresponding author

Correspondence to Zhongming Wei  (魏钟鸣).

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The authors declare that they have no conflict of interest.

Additional information

Huai Yang is currently a PhD candidate at the Institute of Semiconductors, Chinese Academy of Sciences, under the supervision of Prof. Zhongming Wei. His current research interests include the synthesis of low-dimensional materials and their related electronic, photoelectric, ferroelectric and ferromagnetic properties.

Zhongming Wei received his BSc degree from Wuhan University (China) in 2005, and PhD from the Institute of Chemistry, Chinese Academy of Sciences in 2010. From August 2010 to January 2015, he worked as a postdoctoral fellow and then Assistant Professor at the University of Copenhagen, Denmark. Currently, he is a professor at the Institute of Semiconductors, Chinese Academy of Sciences. His research interests include low-dimensional semiconductors and their functional devices.

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Yang, H., Pan, L., Xiao, M. et al. Iron-doping induced multiferroic in two-dimensional In2Se3. Sci. China Mater. 63, 421–428 (2020). https://doi.org/10.1007/s40843-019-1212-x

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